STP3N80K5

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The STP3N80K5 is a N-Channel Enhancement Mode MOSFET that combines very low on-state resistance and excellent switching performance. It is designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. This make it immensely versatile and has a wide range of application in a variety of industries such as Automotive, IoT, Communications and Consumer Electronics.
The STP3N80K5 belongs to the class of MOSFETs known as enhancement mode FETs (Field Effect Transistors). These are different from depletion mode FETs in that they do not draw any current until some gate voltage is applied to them. Once a threshold voltage, also referred to as the \'turn-on\' voltage, is applied to the gate, the MOSFET will turn on and start conducting current. Therefore, by controlling the gate voltage, the drain current can be varied, allowing the MOSFET to function as a switch.
When the STP3N80K5 is used as a switch, it is necessary to select the gate drive voltage to suit the application. It is also necessary to ensure that the gate-to-drain capacitance is suitably sized and matched to the load current. This helps to ensure that the device can switch at rates of up to 100kHz without issue. The device also has a very low ‘on-resistance’ which helps to minimize power losses.
The STP3N80K5 can be used in a variety of applications where a MOSFET switch is the preferred device type. It is especially suited for automotive and automotive related applications since its low ‘on-resistance’ and fast switching performance make it an ideal choice for such applications. It can also be used in other fields such as industrial controls, medical devices, consumer electronics and IoT devices.
The STP3N80K5 is capable of handling up to a maximum drain-to-source voltage of 200V, and can carry up to a maximum drain current of 8.0A. It is also rated for a maximum power dissipation of 64W, making it suitable for high power applications. It is available in an 8-lead DPAK package and can operate in temperatures ranging from -55°C to +150°C.
In conclusion, the STP3N80K5 MOSFET is a versatile and reliable enhancement mode FET suitable for a wide range of applications. Its low ‘on-resistance’ and fast switching speed make it an ideal choice for automotive and related applications. It is also capable of operating at temperatures of up to +150° C, making it suitable for demanding applications.

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