STP30NM50N

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STP30NM50N signifies an N-channel, 30V, 0.15 mΩ, 8.3 A Max., 0.2 W mΩ, SuperMESH™ Power MOSFET transistor, which has been manufactured and released by STMicroelectronics. The transistor’s critical properties include its low RDS(on) of just 0.15 mΩ, integral SuperMESH power topology, and its renowned fast switching. It features a vertical MOSFET structure which is ideal for applications including high-current, low VCE(sat) converters, server power supplies, dc-dc converters, LED lighting solutions, and motor control applications.

The STP30NM50N is constructed of two highly advanced technology components. The heart of the device is the patented SuperMESH power topology which offers a lower resistance, higher power dissipation and improved reliability over a traditional FET front-end design. This is combined with vertical MOSFETs that deliver a low on-state resistance of 0.15 mΩ, which results in reduced power losses and greatly improved efficiency in applications where high current switching is required. The transistor also features a fast body diode that ensures fast turn-off time, which ensures efficient power supply designs.

The STP30NM50N is a single, N-channel MOSFET capable of achieving up to 8.3 A of current at 30V. It features an industry-leading low RDS(on) of 0.15 mΩ which results in reduced power losses and improved efficiency in high current switching applications. The integral SuperMESH power topology allows the device to achieve a higher power dissipation with improved reliability over a traditional FET front-end design. The fast body diode ensures fast turn-off time for efficient power supply designs.

The STP30NM50N is ideal for use in a wide range of high-current, low VCE(sat) converters, server power supplies, dc-dc converters, LED lighting solutions, and motor control applications. Its low RDS(on) ensures efficient and reliable operation and allows for lower power losses, reduced heat dissipation and improved system performance. Its fast diode ensures fast turn-off time, further improving system performance and reliability.

In conclusion, the STP30NM50N is a highly advanced N-channel, 30V, 0.15 mΩ, 8.3 A Max, 0.2 W mΩ SuperMESH™ Power MOSFET transistor, constructed of two highly advanced technology components. Its low RDS(on), integral SuperMESH power topology, and fast switching capabilities make it an ideal choice for a variety of applications requiring high current switching. The fast diode ensures fast turn-off time for efficient power supply designs, further enhancing system performance and reliability.

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