STP3N150

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The STP3N150 is a N-Channel enhancement mode MOSFET with the latest and most advanced process technology for low RDSon, low gate charge and ultra-low on-resistance. Released by STMicroelectronics in 2020, this MOSFET functions to provide exceptional performance as a possible solution to applications in the automotive, consumer, energy and industrial segments.

Application field and Working Principle

The STP3N150 is an ideal choice in applications which require high switching speed, temperature behavior and load current. This MOSFET is robust at high temperatures, making it perfect for automotive applications such as motor control, power supplies, switching regulators and DC-DC converters. It is also extremely efficient for consumer applications such as bicycles, smart home appliances and electric vehicles. At the same time, this MOSFET is suitable for energy applications such as LED control, grid energy control and renewable energy solutions. Finally, its high-frequency capabilities make it a great choice for industrial fields such as RF circuitry, MILCOM and aviation products.

The working principle of the STP3N150 is that it behaves as a switch, between an input gate voltage (Vg) and an output drain voltage (Vd), where a small change in the input voltage can control a large change in the output voltage. In essence, when the gate voltage is ‘turned on’, the drain voltage will be ‘turned on’ and current will be able to flow from the drain to the source. When the gate voltage is ‘turned off’, the drain voltage will be ‘turned off’, and current will not be able to flow from the drain to the source. This makes the STP3N150 a gate-controlled device, which can be used as a switch and amplifier.

The STP3N150 provides excellent efficiency due to its low RDSon and gate charge characteristics and its on-resistance is ultra-low as compared to previous generation products. The gate-source voltage is rated between 10V and 20V and the source-drain voltage is rated between 250V and 600V. The maximum drain current is 150A and the maximum drain-source on-state voltage is 1.5V. Furthermore, the device’s total gate charge is very low at 22 nC.

The STP3N150 incorporates a number of advanced features which further enhance its efficiency, making it one of the most advanced MOSFETs available. These features include a high-speed lateral DMOS architecture, a robust and reliable current-limiting structure, an integrated temperature dependent current sense, an ESD protection structure and a dual-channel ESD cell. Theses features together, make the STP3N150 one of the most efficient MOSFETs with excellent performance at high temperatures, making it an ideal choice for the automotive, consumer, energy and industrial applications.

The STP3N150 is a N-Channel MOSFET, which allude to the fact that it functions as an amplifier, since it amplifies the input signal and produces a corresponding output signal. It is also a gate-controlled device, where a small change in the input voltage can control a large change in the output voltage. Its wide range of applications in different industries, along with its high efficiency and robust performance, makes the STP3N150 an ideal choice for automotive, consumer, energy and industrial solutions.

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