STP32N65M5 Allicdata Electronics
Allicdata Part #:

497-10079-5-ND

Manufacturer Part#:

STP32N65M5

Price: $ 6.70
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 650V 24A TO-220
More Detail: N-Channel 650V 24A (Tc) 150W (Tc) Through Hole TO-...
DataSheet: STP32N65M5 datasheetSTP32N65M5 Datasheet/PDF
Quantity: 374
1 +: $ 6.70320
10 +: $ 6.50210
100 +: $ 6.36804
1000 +: $ 6.23398
10000 +: $ 6.03288
Stock 374Can Ship Immediately
$ 6.7
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Series: MDmesh™ V
Rds On (Max) @ Id, Vgs: 119 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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STP32N65M5 is an N-Channel MOSFET produced by STMicroelectronics. It is a highly efficient, power transistor with low on-resistance and excellent load capability. The device features low gate-threshold voltage and high current handling capability. It has very low input capacitance and high switching speed. The device also features excellent thermal resistance and extremely low switching losses.

The STP32N65M5 is a power MOSFET, suitable for use in high-power electronic applications such as solar, medical, industrial and automotive for switching at high frequencies. It is available in a Surface Mounted Device (SMD) package and is pin-to-pin compatible with the STP25N50. The device has an operating junction temperature of up to 175oC, making it suitable for use in high temperature applications.

The STP32N65M5 utilizes an N-channel MOSFET technology. It has a low threshold voltage and a maximum voltage rating of 700 volts. It also features a maximum current rating of 32 amps. The MOSFET is constructed using a surface mount die and has a low on-resistance of 32 milliohms, which ensures high efficiency and low power dissipation.

The device also has low gate capacitance, reducing power consumption when switching. It is both user-friendly and cost-effective, making it ideal for a variety of power-driven applications.

The STP32N65M5 is an ideal MOSFET for a variety of power management applications. It is designed to provide superior performance in a wide range of power control applications, including voltage regulation, power amplifiers and switching applications. It has a low gate-threshold voltage, high current handling capability and an extremely low on-resistance. It is also highly reliable and cost-effective.

The device is suitable for use in high-speed switching applications, such as switching power supplies and DC/ DC converters. It is also suitable for use in high-frequency circuits, such as radio frequency amplifiers and switching regulators. Its low on-resistance and excellent thermal resistance provide superior performance and reliability even in high power applications.

In summary, the STP32N65M5 is an excellent, high-performance power MOSFET with superior performance, low on-resistance and excellent thermal and switching characteristics. It is ideal for a variety of power control applications, in particular high-power, high-speed switching applications. Its low gate-threshold voltage, high current handling capability and low on-resistance make it a cost-effective choice for power management.

The specific data is subject to PDF, and the above content is for reference

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