Allicdata Part #: | 497-11335-5-ND |
Manufacturer Part#: |
STP34NM60ND |
Price: | $ 7.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 29A TO-220AB |
More Detail: | N-Channel 600V 29A (Tc) 190W (Tc) Through Hole TO-... |
DataSheet: | STP34NM60ND Datasheet/PDF |
Quantity: | 1206 |
1 +: | $ 6.70320 |
50 +: | $ 5.49536 |
100 +: | $ 4.95923 |
500 +: | $ 4.15501 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 190W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2785pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 80.4nC @ 10V |
Series: | FDmesh™ II |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 14.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 29A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STP34NM60ND is a N-channel MOSFET transistor. It is a power MOSFET that is normally used for high-current switching and in power supply circuits. The rated drain source voltage of this transistor is from 15V to 600V and its maximum drain current is 24A. Furthermore, its drain to gate voltage range is from ±20V to 600V.
This powerful MOSFET has a topology that features low ON-state resistance, fast switching time, and low gate charge. It is able to provide voltage and current protection for sensitive electronic components. This device is also suitable for high-speed switching applications in high-voltage automotive and industrial power systems.
The typical application of STP34NM60ND device can include motor control, voice coils, automotive circuits, and power management circuits. It is designed to be used in applications requiring high-speed switching performance and can operate at operating temperatures ranging from -55°C to +150°C. It is available as both a TO-220 and a TO-247 package.
Working Principle of STP34NM60ND
STP34NM60ND transistor is a type of MOSFET with a single channel design. It works by using an applied voltage to control the electric current flowing from source to drain. When the gate is open, electrons can flow through the channel, resulting in an electric current that can be controlled. The conduction channel in the device can be formed by applying an electric field to the gate electrode which allows for an induced channel to form.
The transistor also has a threshold voltage, or Gate-Source Voltage (VGS). This is the minimum voltage that needs to be applied to the gate in order for the transistors to switch on. Once the threshold voltage is reached, the transistor will start to conduct electric current flow from source to drain.
These transistors are able to provide strong voltage and current protection for sensitive electronic components. The rated drain to source voltage of this device is from 15V to 600V and its maximum drain current is 24A. Moreover, the transistor has a wide drain to gate voltage range of from ±20V to 600V.
Conclusion
In summary, the STP34NM60ND is a single N-channel MOSFET transistor that is designed for use in high-current switching power supplies and industrial applications. This transistor is capable of providing low ON-state resistance, fast switching time, and low gate charge. It is available in both TO-220 and TO-247 packages and its rated drain to source voltage is from 15V to 600V with a maximum drain current of 24A. Its drain to gate voltage range is from ±20V to 600V.
The specific data is subject to PDF, and the above content is for reference
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