Allicdata Part #: | TPC8022-H(TE12LQ,M-ND |
Manufacturer Part#: |
TPC8022-H(TE12LQ,M |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 40V 7.5A SOP8 2-6J1B |
More Detail: | N-Channel 40V 7.5A (Ta) 1W (Ta) Surface Mount 8-SO... |
DataSheet: | TPC8022-H(TE12LQ,M Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.3V @ 1mA |
Package / Case: | 8-SOIC (0.173", 4.40mm Width) |
Supplier Device Package: | 8-SOP (5.5x6.0) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 650pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 3.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.5A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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.The TPC8022-H (TE12LQ, M) is an enhancement-type, vertical-channel, insulated gate, FET (field effect transistor), commonly referred to as an MOSFET (metal oxide semiconductor field effect transistor). This device is manufactured for power switching applications, and has a low gate charge, low on-state resistance, and fast switching characteristics that make it suitable for many power supply, automotive, and industrial applications.
This device has three pins which are used for gate, drain, and source. It also has a voltage gate to source rating (VGS) of -20V, an on-state resistance (RDS(on)) of 0.05Ω, and a power dissipation of 705mW. This device is designed to work in the -55°C to +150°C temperature range, and features a drain current of 6A. It is also designed to work in a pulsed mode at a maximum junction temperature of +175°C.
The TPC8022-H (TE12LQ, M) is used primarily in power switching applications to control the on/off state of the power supply. Its low gate charge, low on-state resistance, and fast switching characteristics make it ideal for such applications. It is also used in automotive, industrial, and other power supply applications to provide a clean and efficient solution for power control.
The working principle of the TPC8022-H (TE12LQ, M) is quite simple. When a positive potential is applied to the gate terminal of the device, current flows between the source and the drain of the device, thus allowing the power to be switched on and off. The larger the amount of current that flows between the source and the drain, the larger the on-state resistance, and the greater the power dissipated at the device. By controlling the gate voltage with an external circuit, the amount of current that flows between the source and the drain is controlled, and the on-state resistance is also controlled, thus allowing for efficient power switching applications.
The TPC8022-H (TE12LQ, M) is a reliable and efficient device for power switching applications. Its low gate charge, low on-state resistance, and fast switching characteristics make it an ideal choice for many power supply, automotive, and industrial applications. This device is also well-suited for use in high-temperature environments, making it a good choice for applications that require a reliable and efficient power switching solution.
The specific data is subject to PDF, and the above content is for reference
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