Allicdata Part #: | TPC8014(TE12L,Q,M)-ND |
Manufacturer Part#: |
TPC8014(TE12L,Q,M) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 30V 11A SOP8 2-6J1B |
More Detail: | N-Channel 30V 11A (Ta) 1W (Ta) Surface Mount 8-SOP... |
DataSheet: | TPC8014(TE12L,Q,M) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | 8-SOIC (0.173", 4.40mm Width) |
Supplier Device Package: | 8-SOP (5.5x6.0) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1860pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The TPC8014, which consists of three related parts (TE12L,Q,M) is a versatile, multipurpose field effect transistor specifically designed for use in wide range of applications. It is capable of handling extreme temperatures, high currents and voltages, as well as extremely low power levels. Additionally, it has a wide array of features to make it an ideal choice for any application.
The three components of the TPC8014 are the TE12L, Q, and M. The TE12L is a general-purpose field effect transistor (FET) designed for a wide range of application. It offers robust static characteristics for both enhancement and depletion modes, and has a wide operating range with low gate leakage. The Q is a dual-gate MOSFET, meaning it has two distinct drain-to-source channels. This allows it to be used in applications that require both directionally-controlled current and voltage. The M is a monolithic integrated circuit with an integrated gate-drain structure. It is the most versatile part of the TPC8014, able to operate in both enhancement and depletion modes across its broad operating range.
The TPC8014 application field is quite extensive, ranging from high-performance analog and digital circuitry to industrial-grade power electronics. It is particularly effective in power converter and high-frequency switching applications, serving as a reliable alternative to more current intensive solutions. Additionally, it is well-suited for audio amplifiers, power FETs, switching type Power over Ethernet (POE) converters, and more. Its high-speed switching combination of the two-gate MOSFETs makes it an especially versatile option in comparison to other transistors.
The TPC8014 works on the same principles as all field effect transistors. Its gate is made up of a thin insulated gate, or ig, which is used to form an electric field. When a voltage is applied to the gate, it creates a current which is used to open and close the channel between the drain and the source. This all occurs very quickly, making the TPC8014 ideal for high frequency switching applications.
The TPC8014 is an excellent choice for a wide variety of applications. It is capable of handling extreme temperatures, high currents and voltages as well as extremely low power levels. Additionally, it offers robust static characteristics for both enhancement and depletion modes, and is capable of high-speed switching. Its two gate MOSFETs and monolithic integrated circuit make it a uniquely versatile option in comparison to more specialized transistors, and its wide range of features make it the ideal choice for any application.
The specific data is subject to PDF, and the above content is for reference
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