TPC8062-H,LQ(CM Allicdata Electronics
Allicdata Part #:

TPC8062-HLQ(CM-ND

Manufacturer Part#:

TPC8062-H,LQ(CM

Price: $ 0.64
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 30V 18A 8SOP
More Detail: N-Channel 30V 18A (Ta) 1W (Ta) Surface Mount 8-SOP
DataSheet: TPC8062-H,LQ(CM datasheetTPC8062-H,LQ(CM Datasheet/PDF
Quantity: 1000
3000 +: $ 0.57316
Stock 1000Can Ship Immediately
$ 0.64
Specifications
Vgs(th) (Max) @ Id: 2.3V @ 300µA
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Series: U-MOSVII-H
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The TPC8062-H,LQ (CM) is a type of field-effect transistor (FET) designed primarily for use in the production of logic and analog circuits. It has the advantage of being able to be soldered directly to the circuit board, which makes it one of the most versatile transistors available. Additionally, it is relatively inexpensive compared to some other types of FETs.

A field-effect transistor is a type of transistor characterized by its three terminals, the drain, source, and gate. The gate is used to control the flow of current through the device by applying a voltage to it. It is important to remember that FETs are active devices that require both a voltage and a current to operate correctly.

The TPC8062-H,LQ (CM) is an enhanced version of the standard FET called a MOSFET (metal oxide semiconductor field-effect transistor).MOSFETs are more efficient than their standard counterparts and use less power, making them ideal for use in low power applications. They also have higher switching speeds and increased reliability compared to traditional FETs. In addition, the TPC8062-H,LQ (CM) has a low input capacitance and a fast switching speed.

One of the primary applications for the TPC8062-H,LQ (CM) is in the production of small-scale logic circuits. These circuits are used in a wide variety of electronics, from computers to consumer electronics and automobiles. The device is also used in the manufacture of analog circuits, which are used in the reproduction and manipulation of audio and video signals. Other potential applications include power management and portable devices such as cell phones and handheld computers.

The TPC8062-H,LQ (CM) works by controlling the flow of current between the drain and source terminals through its gate. When a voltage is applied to the gate, it creates an electric field in the P-type layer between the drain and the gate. This electric field then “opens” or “closes” a conductive channel, allowing current to flow between the drain and source terminals.

The electric field also becomes stronger or weaker depending on the gate voltage. This means that the TPC8062-H,LQ (CM) can be used to control the amount of current flowing between the drain and source terminals. This makes it useful for a variety of applications, from detecting signals to controlling the flow of power.

The TPC8062-H,LQ (CM) is a versatile and reliable FET that can be used in a wide variety of applications. Its ability to operate at high switching speeds and low input capacitance makes it ideal for analog and logic circuit production. Additionally, its relatively low cost makes it a popular choice for electronics manufacturers.

The specific data is subject to PDF, and the above content is for reference

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