TSM80N08CZ C0G

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	113.6W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3905pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	91.5nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	8 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction to TSM80N08CZ C0G

TSM80N08CZ C0G is a single N-channel enhancement-mode field-effect transistor (FET) produced by Toshiba. It is a type of FET (Field-Effect Transistor) and MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) which is a type of transistor which uses an electric field to control the flow of electrical current. The C0G suffix indicates that this device has an extended temperature range from -55C to 125C. This device is composed of an N-type gate and drain connected by a silicon dioxide layer.

Application Fields of TSM80N08CZ C0G

TSM80N08CZ C0G is used which needs enhanced operating temperature range. It makes the device ideal for a wide range of applications such as power management systems, motor control circuits, and audio systems. The device has a wide array of features which makes it suitable for use in industrial or automotive systems.The low on-resistance and lower current leakage of TSM80N08CZ C0G makes it well suited for load switch applications. This device can control high currents with low gate drive requirements, making it suitable for a variety of automotive and industrial loads. The low capacitance and superior avalanche characteristics of TSM80N08CZ C0G make it suitable for low-frequency switching circuits, such as those used in mobile base-station power supply and DC-DC converters.

Working Principle of TSM80N08CZ C0G

The working principle of the TSM80N08CZ C0G is based on the principle of field-effect power transistor which uses an electric field to control the flow of electrical current. In the presence of an electric field, the electrons in the semiconductor materials are drawn towards one of the two electrodes which is called the gate electrode. The electric field created between these electrodes controls the flow of electrons from the source to the drain and this in turn, controls the current flow through the device.The device consists of two terminals namely source and drain. The source is where the electrons enter and travel towards the drain, resulting in an electric current. A positive voltage applied to the gate of the TSM80N08CZ C0G causes a current to flow from source to drain, through the channel, which is formed due to the electric field created between the gate and the drain. This current will be proportional to the applied voltage.

Conclusion

TSM80N08CZ C0G is a single N-channel enhancement-mode field-effect transistor (FET) designed and manufactured by Toshiba which is suitable for use in a wide range of applications such as power management systems, motor control circuits, and audio systems. It has a wide temperature range and low on-resistance which makes it suitable for load switch applications. The working principle of the device is based on the principle of field-effect which uses an electric field to control the flow of electrical current.

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