TSM80N950CH C5G

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The TSM80N950CH C5G is a N-channel power MosFET that is an ideal choice for applications requiring an efficient and reliable power switch. It is a popular choice for high current and high power applications. This device is designed for low on-resistance and high switching voltage, with a typical on-resistance of 8 milliohm at 250V. The TSM80N950CH C5G offers a wide range of applications and benefits, and has become a popular choice for many applications that require high-power switching.

The TSM80N950CH C5G is designed for both high current and high voltage applications. It is also designed for low gate-to-source capacitance and low power loss. The device is well suited for power management applications and can be used in a wide range of equipment such as laptop and notebook computers, power supply units, and other portable devices. The device is especially suitable for applications such as switching power supplies, DC/DC converters, and power amplifier design.

The TSM80N950CH C5G is a versatile device due to its wide range of applications. This MosFET has very good switching characteristics and has a low on-resistance of 8 milliohm at 250V. It is a self-protected design that can easily handle over temperature, over current, and over voltage. The device also incorporates the superior thermal performance of the N-channel native technology, with a maximum junction temperature of 175°C.

The TSM80N950CH C5G is a well-known device for power management applications. The device is capable of handling large amounts of current and has very low on-resistance. Its high voltage and low gate-to-source capacitance also make it suitable for use in high power efficiency systems. Its low distortion and fast switching time make it a great choice for switching power supplies and DC/DC converters. In addition, the device has a high voltage rating and features a maximum drain-source breakdown voltage of 800V.

The working principle of the TSM80N950CH C5G is similar to other N-channel power MosFETs. It is a voltage-controlled device, meaning that the gate-source voltage controls the drain-source current. When the gate-source voltage is applied, the drain-source resistance is reduced and current flows from the drain to the source. The resistance from the drain to the source is controlled by the gate voltage. When the gate voltage is increased, the resistance decreases, allowing more current to flow from the drain to the source.

The TSM80N950CH C5G also features a low gate charge, which is its total gate-drain capacitance. This is important in many applications as it reduces the amount of power consumed during switching operations. In addition, the TSM80N950CH C5G has excellent thermal performance and can handle large amounts of current. In addition, it can be used in applications with inrush currents of up to 4A and peak currents of up to 20A.

The TSM80N950CH C5G is a great choice for high current and high power applications. Its low on-resistance, high voltage rating, and low gate charge make it well-suited for high efficiency power management applications. In addition, its fast switching time and low distortion make it suitable for use in power supply designs and DC/DC converters. The device is a popular choice for many applications due to its versatility and reliability, and it is an ideal device for power management and switching power supplies.

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