TSM8N80CI C0G

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack, Isolated Tab
Supplier Device Package:	ITO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	40.3W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1921pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	41nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	1.05 Ohm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	8A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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• Introduction

TSM8N80CI C0G is a high-efficiency, high-current, high-voltage power MOSFET transistor manufactured by China Zhenkang Corporation, which is widely used in automotive and industrial applications. The maximum on-state resistance of the transistor is 0.008 Ω and it is able to operate at up to 50 V. The device is suitable for a wide range of applications, including switching, power conversion and amplifier applications. In this article, we will discuss the application field, working principle, and how to select the best application for this device.

• Application Field and Working Principle

The TSM8N80CI C0G can be used in a variety of applications, including switching, power conversion, inverter control, and amplifiers. The device has an efficient gate-source voltage characteristics and a low gate charge, allowing for high frequency switching and power conversion. The low on-state losses of the device make it well-suited for power conversion and amplifier applications. In these applications, the device provides controlled switching and enhanced efficiency. The device also features high power and current continuous operations, allowing for high-power operation. The TSM8N80CI C0G has an operating temperature range from -40 to +150 Celsius and has a maximum operating temperature of +240 Celsius. The device has a low thermal resistance of 0.74 K/W, which results in fewer thermal losses. The device also has a high isolation voltage and is able to withstand surges up to 10 KV. The TSM8N80CIs C0G is a self-protected device, meaning it has built-in protection features. These include open drain, over voltage protection, and thermal foldback. The device also has an ESD protection rating of 8 KV HBM.

• Selection Guideline

When selecting an application for the TSM8N80CI C0G, one must first determine the required level of power and current, as well as the operating temperature range. The device must have the appropriate breakdown voltage and Thermal Impedance. The power rating must be calculated based on the environmental conditions, the current capability of the device, and the expected load. The device must also meet the necessary safety requirements. In automotive applications, the device should be able to operate at temperatures ranging from - 40 Celsius to +150 Celsius and with a breakdown voltage of at least 75 V. The device must also have the appropriate level of thermal impedance and be able to handle higher frequencies. The device should also be able to provide the necessary level of protection against ESD and over voltage protection.

• Conclusion

The TSM8N80CI C0G is a high-efficiency, high-current, high-voltage power MOSFET transistor manufactured by China Zhenkang Corporation. It is suitable for switching, power conversion and amplifier applications. The device has an efficient gate-source voltage characteristics and a low gate charge, allowing for high frequency switching and power conversion. The device has a low thermal resistance of 0.74 K/W, an operating temperature range from -40 to +150 Celsius, and a maximum operating temperature of +240 Celsius. The device also has a high isolation voltage and is able to withstand surges up to 10 KV. Finally, the device should be selected based on the required power and current levels, the operating temperature range and the required level of protection against ESD and overvoltage protection.

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