Allicdata Part #: | TSM8N50CPROGTR-ND |
Manufacturer Part#: |
TSM8N50CP ROG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CH 500V 7.2A TO252 |
More Detail: | N-Channel 500V 7.2A (Tc) 89W (Tc) Surface Mount TO... |
DataSheet: | TSM8N50CP ROG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 89W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1595pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 26.6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 850 mOhm @ 3.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.2A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The TSM8N50CP is a N-Channel MOSFET that is widely used in a variety of applications. It is a single-ended, uni-junction type power MOSFET which is ideal for use in a wide range of voltage regulator applications.
A MOSFET (or metal–oxide–semiconductor field-effect transistor) is a type of transistor that uses an insulated gate to control the current that passes through it. Unlike an insulated-gate bipolar transistor (IGBT), the MOSFET does not require any additional active parts (i.e. diodes, resistors etc) to regulate the current. Instead, the gate voltage is the only control source, which allows the current to be controlled with much higher precision.
The TSM8N50CP features a variety of features that make it especially suitable for use in a range of applications, such as motor control, power regulators and motor drivers. The device features a low gate charge, low turn-on delay time and fast switching speed, making it ideal for high-power, high-speed applications. Additionally, the device has a high blocking voltage of 800V and an extremely low on-state resistance of 3.2mΩ, resulting in very low conduction losses.
The TSM8N50CP ROG (or regulated-gate operating region) is a feature of the device which makes it ideal for use in voltage regulator applications. The ROG enables the device to operate within a defined region of drain voltage and current, making it ideal for controlling the output voltage of a power supply precisely. Additionally, the ROG also ensures that the device will shut-off in the event of an overload to protect against damage.
The working principle behind the TSM8N50CP is relatively simple. When a voltage is applied to the gate of the MOSFET, a small gate current is driven into the device. This, in turn, creates an electric field within the device that is capable of controlling the current flow through the drain and source terminals. By adjusting the gate voltage, the electric field can be altered, which then allows the current through the source and drain terminals to be regulated accordingly.
The TSM8N50CP is an incredibly versatile and reliable device that is suitable for a variety of applications, from motor controllers to power regulators. With its low gate charge, fast switching speed and its ability to operate in a controlled region, the device is an ideal choice for a wide range of applications requiring precise control of current.
The specific data is subject to PDF, and the above content is for reference
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