TSM850N06CX RFG

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The TSM850N06CX RFG is a high-powered RF Mosfet transistor device. It is used for applications in professional, commercial, and consumer electronics. The device is designed for operation in the VHF and UHF frequency bands, and it is capable of operating up to 50 watts continuously. The device is designed to provide excellent gain and power efficiency across a wide range of frequencies.

The TSM850N06CX RFG is a three-terminal device, typically used as a high frequency switch. The gate terminal is used to control the conduction of current through the device. When the gate terminal is triggered with a low voltage signal, the device allows current to flow through it, and when the gate voltage is decreased, the device becomes reverse biased and prevents current from flowing through it. This switching action is used in RF power amplifiers to rapidly switch the output power on and off.

The TSM850N06CX RFG is built using a silicon substrate and is designed to operate over a wide range of temperate from -55°C to 150°C. The device has a power dissipation rating of 50 W and has an on-resistance of 8 ohms. It has an undershoot protection circuit which protects the device from negative transient voltages and a thermal protection circuit which protects it from excessive current and temperature. In addition, the device has an active voltage peak detection circuit which prevents it from being damaged by high voltage peaks.

The TSM850N06CX RFG is a high performance RF power Mosfet device that is used in a variety of applications. It has excellent gain and power efficiency, a wide operating range, and is built using a robust silicon substrate. The device is capable of operating up to 50 watts continuously, and is suitable for use in professional, commercial, and consumer electronics.

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