TSM80N1R2CH C5G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The TSM80N1R2CH C5G is a type of Single Channel N-Channel Enhancement Mode MOSFET that is part of the TSM series produced by the TOKUMEI company. It has a high gate to source voltage, a low gate charge, and a high power dissipation ability. The TSM series FETs have been designed and optimized for general purpose applications and offer good switching performance at relatively low operating temperatures.

A MOSFET, or metal–oxide–semiconductor field-effect transistor, is a type of field-effect transistor (FET) that uses metal–oxide–semiconductor technology to control the flow of electrons between source and drain. The source and drain terminals of the FET carry the output current, while the gate terminal of the FET controls the input of the current. For this reason, FETs are commonly used as switches and amplifiers.

The TSM80N1R2CH C5G is designed for applications that require high gate to source voltage and low gate charge, such as level shifting, high side switches, and source followers. It also offers high power dissipation and good switching performance at low operating temperatures, making it ideal for various applications. Some of these applications include power supplies, power management, telecommunications systems, motor and controller applications, and automotive electronics.

The working principle of the TSM80N1R2CH C5G is relatively straightforward. The gate of the MOSFET is connected to the source, and the current is controlled by changing the gate voltage. When the voltage at the gate is increased, the current flowing through the MOSFET increases as well, allowing more power to be transmitted. Conversely, when the gate voltage is decreased, the current flowing through the MOSFET is decreased and less power is transmitted.

The TSM80N1R2CH C5G is a robust device that can be used in a variety of applications. Its low gate charge and high power dissipation make it an ideal choice for applications that require high gate to source voltage and low gate charge. Additionally, its robust switching performance and low operating temperature make it ideal for automotive and telecommunications applications.

In summary, the TSM80N1R2CH C5G is a Single Channel N-Channel Enhancement Mode MOSFET designed for applications that require high gate to source voltage, low gate charge, and high power dissipation. Its robust switching performance and low operating temperature make it ideal for various applications, including power supplies, power management, telecommunications systems, motor and controller applications, and automotive electronics.

The specific data is subject to PDF, and the above content is for reference