Allicdata Part #: | TSM85N10CZC0G-ND |
Manufacturer Part#: |
TSM85N10CZ C0G |
Price: | $ 1.31 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CHANNEL 100V 81A TO220 |
More Detail: | N-Channel 100V 81A (Tc) 210W (Tc) Through Hole TO-... |
DataSheet: | TSM85N10CZ C0G Datasheet/PDF |
Quantity: | 930 |
1 +: | $ 1.19070 |
10 +: | $ 1.07541 |
100 +: | $ 0.86398 |
500 +: | $ 0.67197 |
1000 +: | $ 0.55678 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 210W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3900pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 154nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 81A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TSM85N10CZ C0G application field is a type of vertical metal-oxide semiconductor field-effect transistor (MOSFET) with a maximum drain current of 8 A and a drain-source voltage of 100V. It belongs to a group of single-gate n-channel vertical MOSFETs, a category of transistors that operate by having the gate electrically insulated from the source region, allowing the transistor to act as a switch or amplifier. This device, in particular, is used in various applications within the industrial, automotive, and consumer electronics markets.
The MOSFET works by having electrical charges concentrated on the metal oxide in the gate oxide. By applying a voltage, a certain amount of electrons flow from the source to the drain and form a depletion layer. This layer produces a field by trapping some charged particles, and the resistance between the two is controlled by the width of this layer.
In the case of the TSM85N10CZ C0G, it is a N-channel MOSFET, as opposed to a P-channel. N-channel MOSFETs, instead of creating a depletion layer, contain excess electrons that reside near the source and drain. By applying a positive electrical charge, the intensity of the electron flow can be adjusted to control the resistance.
This device is primarily used for applications that require robust electrical performance, specifically the high speed and low on-resistance of this MOSFET type. As a single gate device, the traditional, two-gate MOSFET can be replaced with the TSM85N10CZ C0G and thus save space on circuit boards and reduce costs. It is also suitable for a variety of other applications, such as power electronics for motor drives, DC-DC and AC-DC motor control, and switching circuit design.
The TSM85N10CZ C0G is specifically designed to assist with applications in harsh environments, where high voltage levels and high temperatures bake the steel, rendering reliability and robustness essential. It meets various industry standards, such as AEC-Q101 and UL94V-0. With its superior on-resistance and superior approach to temperature, it can help reduce power loss and keep the environment safe.
The TSM85N10CZ C0G is a reliable and widely used electronic component, used to provide electrical control on circuit boards and in devices. This transistor type can be used in a range of applications and works by applying a voltage to the gate oxide to control resistance using the depletion layer or excess electrons located near the source and drain. Due to its robustness and impressive on-resistance, this transistor type is particularly suitable for high-power switches and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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