| Allicdata Part #: | TSM80N950CIC0G-ND |
| Manufacturer Part#: |
TSM80N950CI C0G |
| Price: | $ 1.34 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | MOSFET N-CHANNEL 800V 6A ITO220 |
| More Detail: | N-Channel 800V 6A (Tc) 25W (Tc) Through Hole ITO-2... |
| DataSheet: |  TSM80N950CI C0G Datasheet/PDF |
| Quantity: | 999 |
| 1 +: | $ 1.22220 |
| 10 +: | $ 1.10376 |
| 100 +: | $ 0.88679 |
| 500 +: | $ 0.68972 |
| 1000 +: | $ 0.57149 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 Full Pack, Isolated Tab |
| Supplier Device Package: | ITO-220 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 25W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 691pF @ 100V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 19.6nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 950 mOhm @ 2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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TSM80N950CI C0G is a power MOSFET component from the Toshiba Electronics Corporation. This component is designed to be used in high voltage applications. It is part of the N-channel MOSFET family. The TSM80N950CI C0G is used in a variety of applications including motor control, switch mode power supplies, LED lighting applications and AC/DC converters.
The TSM80N950CI C0G is a unique component for high voltage applications because of its special features. It has a high voltage rating of 800V and can handle up to 80 amps of peak current. It also has a low on-resistance of 0.09Ω, which allows for efficient switching of power. Furthermore, it has a low gate charge of 37nC, which enables faster switching of power and improved system performance.
The TSM80N950CI C0G is also feature-rich when it comes to protection. It has an avalanche voltage of 500V. This feature provides extra protection against overvoltage events. The TSM80N950CI C0G also has a reverse recovery time of 100nsec, which prevents current spikes during the switching process.
The working principle of the TSM80N950CI C0G is based on the principle of MOSFET transistors. A MOSFET transistor is a three terminal device that uses a metal oxide semiconductor to control the current flow between the source and drain. The gate terminal is used to control the current flow. When a positive voltage is applied to the gate, it creates an inversion layer that enables current to flow from the source to the drain. When the gate voltage is decreased, the current flow is stopped.
The TSM80N950CI C0G is an ideal choice for use in applications where efficiency and reliability are critical. Its high voltage rating, low on-resistance, low gate charge and protection features make this power MOSFET an excellent choice for high voltage applications. Its ability to handle up to 80 amps of current and its fast switching speeds make it an ideal choice for motor control, switch mode power supplies, LED lighting and AC/DC converter applications.
The specific data is subject to PDF, and the above content is for reference
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