TSM8N70CI C0G

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The TSM8N70CI C0G is a single, low-power N-channel enhancement mode MOSFET. It is an advanced triggering device designed for use in bridge circuits, DC-to-DC converters, and DC-to-AC inverter applications. This device combines the advantages of NMOS and capacitive structures to provide an optimized MOSFET for a variety of power supply applications. The device can be used in both high-current/low-power and low-current/high-power applications.

The TSM8N70CI C0G has a drain-source current capacity of up to 7A and a maximum gate-source voltage of 20 the TSM8N70CI C0G can operate with a gate capacitance of up to 5pF.

It also has a typical on-state resistance of 0.26Ω and an internal drain-to-source diode with a reverse leakage current of 70A. The device can operate in temperatures as low as -55°C and as high as 150°C. The TSM8N70CI C0G can also operate at frequencies up to 100kHz.

The TSM8N70CI C0G is suitable for use in a variety of power applications, including bridge rectifiers, DC-to-DC converter circuits, motor control circuits, audio power amplifiers, and inverter circuits. The device can also be used in applications where high reliability is required, such as solar panel inverters and motor control. The TSM8N70CI C0G can also be used in medical and aerospace applications.

The TSM8N70CI C0G has a working principle that is based on the relationship between the gate-source voltage (VGS) and the drain-source current (ID). When a positive gate-source voltage is applied to the gate terminal, the MOSFET will turn on, allowing the current to flow from the drain terminal to the source terminal. By changing the gate-source voltage, the drain-source current can be adjusted accordingly. The TSM8N70CI C0G is also able to withstand high currents at high frequencies, making it ideal for use in switching applications.

The TSM8N70C0 C0G is an ideal choice for low-power applications where high-current needs to be handled with low gate drive power. It is also suitable for use in high-voltage applications due to its low on-resistance and high voltage ratings. The device also offers high noise immunity and is low on losses due to its low maximum junction temperature and low gate-source capacitance.

In conclusion, the TSM8N7C0 C0G is an excellent choice for applications such as bridge rectifiers, DC-to-DC converters and audio power amplifiers. It is a reliable low-power MOSFET featuring low on-resistance, low gate-source capacitance, and high voltage ratings. The device is easy to use, offers high noise immunity, and is low on losses. It is a versatile MOSFET that can be used for low-power and high-current applications.

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