Allicdata Part #: | TSM80N1R2CPROGTR-ND |
Manufacturer Part#: |
TSM80N1R2CP ROG |
Price: | $ 0.63 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CH 800V 5.5A TO252 |
More Detail: | N-Channel 800V 5.5A (Tc) 110W (Tc) Surface Mount T... |
DataSheet: | TSM80N1R2CP ROG Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.57022 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 685pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 19.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 2.75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TSM80N1R2CP ROG is a single N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It has a Logic Level of 0/-0.6V, a Drain-Source On resistance of 8mΩ, a gate-source threshold voltage of 1.8V and a maximum drain current of 80A. MOSFETs are commonly used in a wide range of applications due to their highly efficient switching characteristics and low power consumption. TSM80N1R2CP ROG is typically used in high current switching power supplies, motor control, DC to DC converters, and in the motor control of three-phase motor drives.
A MOSFET is a four-terminal device consisting of a source, a drain, a gate, and a body. It is a voltage-controlled device that can act as either an amplifier, a switch, or an oscillator. The way the MOSFET works is through the "gate" terminal. Applying a positive or negative voltage to the gate opens or closes the channel between the source and the drain. When the channel is closed, the current between the source and the drain is limited, and the device acts as an amplifier, allowing the current flowing through the channel to be controlled by the voltage applied to the gate.
In the case of the TSM80N1R2CP ROG, applying a voltage of 0/-0.6V to the gate opens the channel between the source and the drain. The device\'s on resistance is 8mΩ, meaning it can handle up to 80A of current. It also has a gate-source threshold voltage of 1.8V, meaning it requires at least this voltage to turn on the device. This makes it suitable for applications that require high current switching and precise control over the current flow.
The TSM80N1R2CP ROG is a versatile device that can be used for a wide range of applications. It is typically used in high current switching power supplies, motor control, DC to DC converters, and in the motor control of three-phase motor drives. It is also used for linear motor control, RF amplifiers and oscillators, power conversion and protection equipment, and many other switching applications. Due to its low power consumption, it is also ideal for portable applications.
The TSM80N1R2CP ROG is a versatile MOSFET that can be used in a wide range of applications due to its highly efficient switching characteristics and low power consumption. It is most commonly used in high current switching power supplies, motor control, DC to DC converters, and in the motor control of three-phase motor drives. It is a highly efficient device that can be used for linear motor control, RF amplifiers and oscillators, power conversion and protection equipment, and many other switching applications. It is also ideal for portable applications due to its low power consumption.
The specific data is subject to PDF, and the above content is for reference
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