TSM8N50CH C5G

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	TO-251 (IPAK)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	89W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1595pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	26.6nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	850 mOhm @ 3.6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	7.2A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

TSM8N50CH C5G is a high speed, insulated gate bipolar transistor (IGBT) manufactured by Toshiba. This IGBT is designed to offer high efficiency, high reliability, and high breakdown voltage with low thermal resistance. It is a single-channel device that utilizes a trench gate structure to reduce switching losses. This article will discuss the applications and working principle of TSM8N50CH C5G.

Applications

The TSM8N50CH C5G has a wide range of applications, including the following:• Low-loss DC to AC inverters • High-voltage circuits and rectifiers • Power supplies• Motor control systems• Light ballasts• Power factor correction (PFC)• Uninterruptible power supplies (UPS)• Solar power systems• Electric vehicle (EV) charging systems• Renewable energy systems

Working Principle

The TSM8N50CH C5G is a high-performance insulated-gate bipolar transistor (IGBT) with a trench gate structure. It utilizes an insulated gate, or "floating" gate, to lower on-state losses due to reduced channel resistance and provide faster switching speeds. This IGBT also features a wide range of operating temperatures and a high breakdown voltage.The TSM8N50CH C5G has a breakdown voltage of 1200V and it can handle bursts of up to 12A without damage. The device operates at a junction temperature of up to 150°C. It has a low gate charge of only 18nC and a very low gate-to-source voltage of -5V.The device\'s low gate charge helps reduce switching losses. The low gate-to-source voltage helps reduce the losses associated with turn-on delay. The low on-resistance helps reduce the power consumption of the device, which in turn helps to improve efficiency.

Conclusion

The TSM8N50CH C5G is a high-performance IGBT designed to offer high efficiency, high reliability, and low thermal resistance. It is a single-channel device with a wide range of applications, and it features a breakdown voltage of 1200V and a low gate charge of 18nC. It also has a low gate-to-source voltage of -5V, which helps reduce turn-on delay times. The device is capable of operating at a junction temperature of up to 150°C, and it can handle bursts of up to 12A without damage. The low on-resistance of the device helps to reduce the power consumption of the TSM8N50CH C5G, resulting in improved efficiency.

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