TSM80N1R2CL C0G

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The TSM80N1R2CL C0G is a high-performance N-channel logic level field effect transistor (FET). The device is specifically designed for high-speed logic-level 5V applications and provides exceptional performance in terms of speed, low power consumption and low switching losses. This FET does not require a gate charge for switching, making it ideal for use in applications where low power usage is a priority.

The TSM80N1R2CL C0G provides a low on-state resistance of 0.6 ohms, making it an ideal device for switching operations where low on-state resistance is necessary. The device features an ultra low input capacitance of 15 pF and an extremely low gate-to-drain capacitance of 3.5 pF. This combination makes the device suitable for high-speed switching operations.

The TSM80N1R2CL C0G has a maximum drain-source voltage of -45V and a maximum gate-source voltage of -4.4V. It has a continuous drain current rating of 2.2 A and a pulsed drain current rating of 7.6 A. With its rated Vgs of -4.4V, the maximum drain current can reach up to 6A with a gate-source voltage of -5V.

The TSM80N1R2CL C0G is designed to operate in either enhancement or depletion modes of operation. In enhancement mode, a positive gate-source voltage will cause the device to activate while a negative gate-source voltage will cause it to remain off. In depletion mode, a negative gate-source voltage will cause the device to activate while a positive gate-source voltage will cause it to remain off.

In enhancement mode, the logic level of the signal dictates the gate-to-source voltage (-0.5V or -5V). When the signal goes from low to high, a positive gate-to-source voltage is applied to the device and it is activated. When the signal goes from high to low, a negative gate-to-source voltage is applied to the device and it is deactivated.

In depletion mode, the gate-to-source voltage must exceed the threshold voltage for the device to be activated. When the signal is low, a negative gate-to-source voltage is applied to the device and it remains off. When the signal is high, the gate-to-source voltage is increased, which activates the device.

The TSM80N1R2CL C0G is ideal for use in high-speed logic applications such as USB/I2C/SPI interfaces, logic level latch and buffer circuitry, logic level mux/demux circuitry, and high-speed digital signal processing (DSP) operations. Its combination of low on-state resistance, low input capacitance, and low gate-to-drain capacitance makes it a great choice for high-performance applications.

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