UNR32AM00L Allicdata Electronics

UNR32AM00L Discrete Semiconductor Products

Allicdata Part #:

UNR32AM00LTR-ND

Manufacturer Part#:

UNR32AM00L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 100MW SSSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR32AM00L datasheetUNR32AM00L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F1
Description

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The UNR32AM00L is one of the most widely used transistors in the electronics industry. This type of bipolar (BJT) single pre-biased transistor is used in a variety of applications, including power control and audio amplification.

The UNR32AM00L is a single-pole pre-biased transistor, which means it is designed to be used without the need for an additional bias resistor and capacitor. This makes it an ideal transistor for applications that require low power consumption, as the pre-bias ensures the transistor is always in the correct operating range.

The UNR32AM00L is a NPN transistor, which means that the collector is the most negative potential and the emitter is the most positive potential. The base is the control point that, when biased with a small current, allows current to flow between the collector and emitter.

The UNR32AM00L is typically used in switching, drivers and amplifiers. In switching applications, the transistor is used to switch on and off a load, such as a motor or a light. In drivers, the transistor is used to drive a load, such as a motor or a relay, and in amplifiers, it is used to increase the amplitude of a signal.

The UNR32AM00L works by utilizing what is known as the transistor’s current gain, or hFE. This is the ratio of the collector current to the base current. The higher the hFE rating, the more current the transistor can deliver. For example: A transistor with an hFE rating of 200 can deliver 200 times the amount of current than a transistor with an hFE rating of 1.

The UNR32AM00L also has a current gain bandwidth product, or G/bP, which is used to calculate the upper frequency limit at which the transistor will operate. The G/bP is calculated by dividing the gain (hFE) by the base current. For example: A transistor with an hFE rating of 200 and a base current of 0.25mA would have a G/bP of 800MHz.

The UNR32AM00L also has a maximum collector current rating, which specifies the maximum amount of current the transistor can handle. For example: A transistor with a maximum collector current rating of 500mA can handle up to 500mA of current.

Finally, the UNR32AM00L has a maximum collector-emitter voltage rating, which specifies the maximum voltage that can be applied between the collector and emitter. For example: A transistor with a maximum collector-emitter voltage rating of 40V can safely handle voltages up to 40V.

In conclusion, the UNR32AM00L is one of the most widely used transistors in the world. It is a single pre-biased NPN transistor, used for switching, driving and amplifying a variety of applications. The UNR32AM00L has a hFE current gain, a G/bP bandwidth product, a maximum collector current rating, and a maximum collector-emitter voltage rating. These characteristics make it a versatile transistor for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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