UNR32AE00L Allicdata Electronics

UNR32AE00L Discrete Semiconductor Products

Allicdata Part #:

UNR32AE00LTR-ND

Manufacturer Part#:

UNR32AE00L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 100MW SSSMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR32AE00L datasheetUNR32AE00L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F1
Description

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UNR32AE00L transistors, also known as bipolar junction transistors (BJT) are single pre-biased models that are widely used in a number of applications. This type of transistor is known for its ease of use, as well as its efficiency and power handling, making it a popular choice amongst engineers and technicians.

A bipolar junction transistor consists of three layers that are arranged to form a PN junction. These layers include an emitter, base, and a collector. When two opposing electrical currents are applied to the transistor, the base-emitter junction creates a controlled and direct current flow between the collector and the emitter. This creates a voltage gain or loss, depending on the current polarity.

The UNR32AE00L transistor is designed to operate with an emitter-collector voltage of 32V and a power dissipation of 4W. This type of transistor is usually used in low and medium frequency applications such as switching and amplification. It is also commonly used in motors, heaters, and medical equipment.

The UNR32AE00L transistor is typically pre-biased, meaning that an electrical current is already flowing through the base-emitter junction before the control current is applied to the transistor. This bias helps to reduce the current requirements of the transistor and it can also be adjusted to optimize the device for various applications.

In addition to its pre-biased structure, the UNR32AE00L transistor contains numerous built-in safety features that help prevent damage to the device. These include a feed-back diode, a protection diode, and a built-in common-mode inductance. These safety features help to protect the transistor from over-voltage and over-current conditions.

In order to ensure that the UNR32AE00L transistor functions properly, it is important to select the appropriate bias voltage and current. This will vary depending on the application, but typically the current should not exceed 50mA and the voltage should be set to 3.8V.

The UNR32AE00L transistor is a reliable and powerful solution for many electronic applications. Its pre-biased structure and built-in safety features make it one of the most popular transistors used today. It is easy to use, efficient, and can handle high power levels, making it an ideal choice for numerous applications.

The specific data is subject to PDF, and the above content is for reference

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