UNR511000L Discrete Semiconductor Products

Resistor - Base (R1):	47 kOhms
Supplier Device Package:	SMini3-G1
Package / Case:	SC-70, SOT-323
Mounting Type:	Surface Mount
Power - Max:	150mW
Frequency - Transition:	80MHz
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 5mA, 10V
Series:	--
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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UNR511000L Application Field and Working PrincipleThe UNR511000L is a single, pre-biased, bipolar junction transistor (BJT). A single, pre-biased BJT, commonly known as a “pre-biased” BJT, enables the use of the transistor to drive a load such as a transistor laser or a regular electronic circuit. The pre-biased BJT allows for low on-state resistance and low power dissipation.The UNR511000L is designed for use in applications where a high degree of linearity and low power dissipation are required. Common applications include power supplies, amplifier circuits, stepper motor drivers and other precision control systems.In a basic BJT circuit, current flows through the base-emitter junction and into the collector. As the base current increases, the voltage drop across the collector-emitter junction decreases. In this way, the base current acts as a control to the collector current, being either off or on depending on the state of the base terminal. This property of a BJT allows for precise control of the collector current.The UNR511000L is a PNP type BJT, which means that its active region is defined as the region from the base-emitter junction to the base-collector junction. The PNP transistor normally has a low collector-base voltage drop, but the base-emitter junction has a higher voltage drop at the same collector current. This is one of the advantages of using a PNP transistor in a power circuit, as it allows for higher power dissipation.In the case of the UNR511000L, the base-emitter voltage drop is only 0.05V, making the device ideal for low current applications due to its low saturation voltage and low power dissipation. Additionally, the UNR511000L has a low on-state resistance and a high breakdown voltage, making the device ideal for harsh conditions.The UNR511000L is designed to be used in applications where a high degree of linearity and low power dissipation are required. It can be used to drive transistors lasers, as well as regular electronic circuits. It is also well suited for use in power supplies, amplifier circuits, as well as stepper motor drivers and other precision control systems. The UNR511000L is a great choice for engineers who need excellent performance in their circuit designs.

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