UNR521800L Discrete Semiconductor Products

Resistor - Emitter Base (R2):	5.1 kOhms
Supplier Device Package:	SMini3-G1
Package / Case:	SC-70, SOT-323
Mounting Type:	Surface Mount
Power - Max:	150mW
Frequency - Transition:	150MHz
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 5mA, 10V
Series:	--
Resistor - Base (R1):	510 Ohms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	NPN - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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UNR521800L is a pre biased single bipolar junction transistor (BJT) that is widely used for various kinds of applications in the industry. This transistor offers excellent high linearity and high frequency performance, providing excellent audio quality and related functions.UNR521800L is commonly used in high speed analog and digital circuits, as well as in amplifier and power supply applications. The transistor features excellent thermal stability and fast switching speed, making it suitable for a wide range of applications.In terms of its working principle, UNR521800L is composed of three p-n-p layers. These layers form a parasitic bipolar junction, wherein the third layer serves as the base, the second layer serves as the collector, and the first layer serves as the emitter. The transistor is in a pre-biased state, meaning that all three layers are consistently charged during operation. This is because the emitter layer is connected to the base layer, where a small DC bias voltage is applied in order to prevent fluctuations in the transistor’s operating point. The operating point meaning that the transistor is maintained in its active region, meaning that there is enough voltage to maintain current flow at a steady rate. This is beneficial as the transistor utilizes this steady current flow to amplify a given signal current and produce an output signal.UNR521800L’s operation is governed by the Ebers-Moll\'s equations which describe the device’s behavior in terms of its current, voltage, and temperature. This equation states that the current flowing out of the emitter junction is directly proportionate to the voltage AND temperature in the transistor’s structure.This transistor is commonly used in amplification, oscillator, mixer and other circuits where input signals require amplification. UNR521800L is also well suited for applications which require minimal power dissipation due to its high frequency performance.In the field of audio applications, UNR521800L is an incredibly versatile transistor. This transistor is widely used for various sound processing parameters, such as low distortion oscillators, frequency dividers, and audio amplifiers. Its high linearity audio performance makes it well suited for hi-fi audio applications where minimal distortion is essential.UNR521800L’s distributed capacitance allows for high slewing rates (the rate of change of the current output of the transistor in response to a change in the controlling voltage) which helps in making this device highly suitable for applications requiring fast switching speeds. This transistor is also suitable for operations at high temperatures. It can consist up to be used in harsh environments without any issues.With the above features and advantages, UNR521800L is a widely popular transistor for various types of electronic products and circuitry. It is a cost effective, high-performance solution for various applications, and its versatility and efficiency make it an ideal choice for many industry projects.

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