UNR521NG0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR521NG0LTR-ND |
Manufacturer Part#: |
UNR521NG0L |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR521NG0L Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04680 |
Resistor - Emitter Base (R2): | 47 kOhms |
Supplier Device Package: | SMini3-F2 |
Package / Case: | SC-85 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 150MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors are electronic components used for switching and amplifying electronic signals. The UNR521NG0L is a single, pre-biased, bipolar junction transistor (BJT).
A BJT is composed of two semiconductor junctions, known as the base-emitter and base-collector junctions. It is the movement of charge carriers, or electrons and holes, across these junctions that allows the transistor to switch and amplify electrical signals. The UNR521NG0L has been designed with these two junctions connected, meaning it has a built in base-emitter bias current and is already in an active state, meaning it requires less current and power to be operated, making it a great choice for those seeking a more efficient transistor.
The UNR521NG0L is suitable for use as a general purpose switching transistor in circuits such as amplifiers, audio systems, digital synthesizers, and motor controllers. It is also suitable for low current applications such as interfacing with transducers, as well as low open-circuit turn-off time applications, such as high-speed optical drivers.
The UNR521NG0L features a high current gain of 300, meaning it is able to amplify low level signals to a much larger amplitude. It is also rated for 100mA of continuous collector current, and has a collector-emitter voltage rating of 250V. These ratings make it ideal for a wide range of electronic circuits.
In terms of its working principle, the UNR521NG0L can be thought of as two pairs of transistors connected back to back. When a small current flows from the base to the emitter, the transistor is turned on, allowing the collector current to flow. When the base current is removed, the transistor turns off and the collector current stops flowing. This principle of operation allows the transistor to be used as a switch, controlling the flow of current in a circuit.
The UNR521NG0L is an excellent choice for those looking for a high performance single, pre-biased bipolar junction transistor. With a high current gain, high collector current rating, and a wide range of application possibilities, it is a versatile and reliable option for a broad range of electronics projects.
The specific data is subject to PDF, and the above content is for reference
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