UNR5212G0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR5212G0LTR-ND |
Manufacturer Part#: |
UNR5212G0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR5212G0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-85 |
Supplier Device Package: | SMini3-F2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR5212G0L is a post-biased single bipolar junction transistor, commonly referred to as a BJT. It was designed in the early-1980s by the United States-based company Motorola and is still widely used today in various applications. The UNR5212G0L has two terminals, the base (B) and the emitter (E), which control the flow of current by allowing or preventing its passage through the collector. It is a handy device for switching and amplification.
The application fields of the UNR5212G0L are numerous and varied, but they are typically related to consumer electronics, such as small radios and audio systems. Its small physical size and low power consumption make it ideal for use in miniature circuits. It is ideal for use in a variety of consumer audio products because it can handle low-frequency andhigh-frequency audio signals with ease, and it does not generate any unwanted electronic noise.
The working principle of the UNR5212G0L is relatively simple. It consists of a semiconductor material sandwiched between two electrodes, the base andthe emitter. When a current is applied to the base, it allows the current to flow from the emitter to the collector and then back to the emitter. This action amplifies the input current, producing more current at the output. The current gain (or “hFE”) of the device is determined by the ratio of base current to the output current.
The UNR5212G0L is a bipolar junction transistor with a small physical size and a higher current gain than most other bipolar transistors. It is a popular choice for consumer electronics because of its small size and low power consumption. Its high hFE makes it well-suited for use in amplification and voltage-controlled switching circuits, and its excellent linearity ensures faithful reproduction of audio signals. It is also a favorite of hobbyists because it is easy to use and can be found inexpensively.
The UNR5212G0L is a versatile, reliable and affordable electronic component that can greatly benefit consumer electronics manufacturers and hobbyists alike. Its simple but effective design ensures that it can be used in a variety of applications, and its minimal power consumption makes it well-suited for use in miniature circuits. Its sturdy construction also makes it highly reliable and unlikely to need repairs or maintenance.
The specific data is subject to PDF, and the above content is for reference
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