UNR511200L Discrete Semiconductor Products

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UNR511200L is a single, pre-biased bipolar transistor, featuring high current capabilities. This type of transistor is widely used in a variety of applications due to its versatility. In this article we will discuss its application field and working principle.

Features

UNR511200L is a pre-biased, high current, bipolar transistor. It is designed to minimize power losses in power supply circuits, and maximize the efficiency of the circuit. It is also designed for use with small amounts of current, and it’s capable of switching between the two states quickly. The product is also able to handle large amounts of input current and can be used in circuits with high power levels.

In addition, the UNR511200L transistor also features a wide range of operating parameters. It has a high speed switching time of just 12ns, and a low on-resistance level of only 2.2 ohms. The product also features a range of voltage levels, and it can operate up to a maximum of 24V.

Finally, the UNR511200L also has an excellent thermal rating. It is rated for a maximum operating temperature of 125°C. This allows it to be used in a wide range of applications, including high-power applications.

Application Fields

The UNR511200L is an ideal choice for a variety of applications. It is particularly well suited for use where high current is needed. This includes power supply circuits, motor control, and high-efficiency LED lighting. The high power ratings also make it a good choice for use in automotive and aerospace applications.

In addition, the UNR511200L is also suitable for use in other electronic circuitry, such as analog and digital signal processing, data buffering, clock synchronization, instrumentation, and robotics. It is also suitable for applications involving audio- and video-processing, as well as low noise amplifiers and power line communication.

Working Principle

The UNR511200L is able to quickly and efficiently switch between the two possible operating states of a transistor, allowing it to handle large currents. This is done by controlling the base-emitter voltage (VBE). When the base-emitter voltage is low, the transistor is in its “OFF” state. Here, the current is cut off as the base-emitter voltage does not allow the transistor to conduct current. On the other hand, when the base-emitter voltage is raised, the transistor is in its “ON” state. Here, the current can flow through the device due to the opened base-emitter junction.

The base-emitter voltage is determined by the external circuit, and the desired current can be set using this voltage. The external circuit also provides the energy to turn the transistor on and off, allowing it to switch between the two states quickly and easily.

Conclusion

The UNR511200L is a single, pre-biased bipolar transistor with a high current rating and a wide range of operational parameters. It is designed for use in a variety of applications and can handle large amounts of current. It is also able to switch between the two states quickly, and its thermal rating is excellent. With its versatile range of applications and great performance, the UNR511200L is an ideal choice for a range of power supply circuits.

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