UNR511400L Allicdata Electronics

UNR511400L Discrete Semiconductor Products

Allicdata Part #:

UNR511400LTR-ND

Manufacturer Part#:

UNR511400L

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 150MW SMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR511400L datasheetUNR511400L Datasheet/PDF
Quantity: 9000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
3000 +: $ 0.04680
6000 +: $ 0.04212
Stock 9000Can Ship Immediately
$ 0.05
Specifications
Resistor - Emitter Base (R2): 47 kOhms
Supplier Device Package: SMini3-G1
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 80MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Series: --
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

UNR511400L is a type of single, pre-biased bipolar junction transistor (BJT). It is a three-terminal semiconductor device consisting of an emitter, a base, and a collector. BJTs have been used since the 1950s and have become a popular choice for many applications, due to their low cost, relatively high performance, and simplicity of operation

UNR511400L works by controlling the current between the collector and the emitter. When a voltage is applied to the base, it increases the width of the depletion layer between the two terminals, which in turn increases the current for a given voltage. This current flow between the collector and emitter is known as the collector-to-emitter current (I c ). This current is proportional to the base current (I b )—the higher the base current, the higher the collector-to-emitter current.

UNR511400L can be used in a variety of applications. One such application is in switching circuits, where the transistor is used to switch a load on or off. This could be used to switch a light bulb, for example. In this application, the base of the transistor is connected to a control source, such as a push button. When the push button is pressed, it causes the base current to rise which in turn causes the collector-to-emitter current to rise and the load (light bulb) to turn on.

Another common application for UNR511400L is in amplifier circuits, where it is used to amplify weak signals. In this application, the base of the transistor is connected to an input (or “weak”) signal, while the collector is connected to a load. When the input signal is applied to the base, the resulting collector-to-emitter current causes an amplified output signal to be present at the collector. The amount of amplification can be controlled by changing the current gain of the transistor.

UNR511400L is also useful in oscillator circuits. In this application, the transistor is used to create a steady-state oscillation, which can be used to generate signals at a particular frequency, such as those found in radio transmitters. This type of oscillator is known as a Colpitts Oscillator and it works by feeding back the output of the amplifier circuit to the base of the transistor.

UNR511400L is an important component in many different applications and it is an important area of research for many engineers. It is important to understand the working principles of UNR511400L to be able to design properly functioning circuits, as well as improve existing designs.

The specific data is subject to PDF, and the above content is for reference

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