UNR511400L Discrete Semiconductor Products |
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Allicdata Part #: | UNR511400LTR-ND |
Manufacturer Part#: |
UNR511400L |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR511400L Datasheet/PDF |
Quantity: | 9000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
3000 +: | $ 0.04680 |
6000 +: | $ 0.04212 |
Resistor - Emitter Base (R2): | 47 kOhms |
Supplier Device Package: | SMini3-G1 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 80MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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UNR511400L is a type of single, pre-biased bipolar junction transistor (BJT). It is a three-terminal semiconductor device consisting of an emitter, a base, and a collector. BJTs have been used since the 1950s and have become a popular choice for many applications, due to their low cost, relatively high performance, and simplicity of operation
UNR511400L works by controlling the current between the collector and the emitter. When a voltage is applied to the base, it increases the width of the depletion layer between the two terminals, which in turn increases the current for a given voltage. This current flow between the collector and emitter is known as the collector-to-emitter current (I c ). This current is proportional to the base current (I b )—the higher the base current, the higher the collector-to-emitter current.
UNR511400L can be used in a variety of applications. One such application is in switching circuits, where the transistor is used to switch a load on or off. This could be used to switch a light bulb, for example. In this application, the base of the transistor is connected to a control source, such as a push button. When the push button is pressed, it causes the base current to rise which in turn causes the collector-to-emitter current to rise and the load (light bulb) to turn on.
Another common application for UNR511400L is in amplifier circuits, where it is used to amplify weak signals. In this application, the base of the transistor is connected to an input (or “weak”) signal, while the collector is connected to a load. When the input signal is applied to the base, the resulting collector-to-emitter current causes an amplified output signal to be present at the collector. The amount of amplification can be controlled by changing the current gain of the transistor.
UNR511400L is also useful in oscillator circuits. In this application, the transistor is used to create a steady-state oscillation, which can be used to generate signals at a particular frequency, such as those found in radio transmitters. This type of oscillator is known as a Colpitts Oscillator and it works by feeding back the output of the amplifier circuit to the base of the transistor.
UNR511400L is an important component in many different applications and it is an important area of research for many engineers. It is important to understand the working principles of UNR511400L to be able to design properly functioning circuits, as well as improve existing designs.
The specific data is subject to PDF, and the above content is for reference
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