UNR51A4G0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR51A4G0LTR-ND |
Manufacturer Part#: |
UNR51A4G0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR51A4G0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 80mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-85 |
Supplier Device Package: | SMini3-F2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
UNR51A4G0L transistors, classified as Bipolar (BJT) - Single, Pre-Biased transistors, are widely used in consumer electronic and automotive applications. They are designed to provide high switching speed, wide gain bandwidth and good linearity characteristics.
The UNR51A4G0L is a monolithic NPN transistor with built-in resistors and bias networks optimized to ensure ultra-low power consumption. Its features include integrated bias resistors to minimize power while achieving high speeds and very low quiescent power in both active and standby states.
The UNR51A4G0L makes use of a monolithic NPN transistor with a uniform base-to-emitter voltage, allowing for a low-power switching current up to 10mA. It also utilizes a spurious-free gain bandwidth product of up to 900MHz and wide collector current range of up to 20mA, making it well-suited for many applications.
The primary application fields for the UNR51A4G0L include audio and video applications, RF receivers, wireless communications, and power management applications. As an audio application, it can be used to provide low-noise performance in speech amplifiers and sound systems.
In wireless communications, it can be utilized as an amplifier in cell phone transmitters and as a receiver in point-to-point radio links. In power management, it is typically used in battery management and switching applications, providing stable performance and low power consumption.
The working principle of the UNR51A4G0L is based on the principle of a bipolar junction transistor. The transistor is made up of three layers of semiconductor materials that form the N-type region, the P-type region, and the Collector. The N-type region is extremely thin, allowing for easy flow of charge carriers between the electrons and holes.
The current flow between the N-type and P-type regions is controlled by the base-emitter voltage. The voltage is provided by the built-in bias resistors to minimize the power consumption. As the current flows from the collector to the emitter, it is amplified by the transistor and can be used to switch on and off various devices.
The UNR51A4G0L is a versatile device, offering a wide variety of applications, high switching speeds, and low power consumption. It is widely used in consumer electronic and automotive applications, providing excellent performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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