UNR51A4G0L Allicdata Electronics

UNR51A4G0L Discrete Semiconductor Products

Allicdata Part #:

UNR51A4G0LTR-ND

Manufacturer Part#:

UNR51A4G0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 150MW SMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR51A4G0L datasheetUNR51A4G0L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2
Description

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UNR51A4G0L transistors, classified as Bipolar (BJT) - Single, Pre-Biased transistors, are widely used in consumer electronic and automotive applications. They are designed to provide high switching speed, wide gain bandwidth and good linearity characteristics.

The UNR51A4G0L is a monolithic NPN transistor with built-in resistors and bias networks optimized to ensure ultra-low power consumption. Its features include integrated bias resistors to minimize power while achieving high speeds and very low quiescent power in both active and standby states.

The UNR51A4G0L makes use of a monolithic NPN transistor with a uniform base-to-emitter voltage, allowing for a low-power switching current up to 10mA. It also utilizes a spurious-free gain bandwidth product of up to 900MHz and wide collector current range of up to 20mA, making it well-suited for many applications.

The primary application fields for the UNR51A4G0L include audio and video applications, RF receivers, wireless communications, and power management applications. As an audio application, it can be used to provide low-noise performance in speech amplifiers and sound systems.

In wireless communications, it can be utilized as an amplifier in cell phone transmitters and as a receiver in point-to-point radio links. In power management, it is typically used in battery management and switching applications, providing stable performance and low power consumption.

The working principle of the UNR51A4G0L is based on the principle of a bipolar junction transistor. The transistor is made up of three layers of semiconductor materials that form the N-type region, the P-type region, and the Collector. The N-type region is extremely thin, allowing for easy flow of charge carriers between the electrons and holes.

The current flow between the N-type and P-type regions is controlled by the base-emitter voltage. The voltage is provided by the built-in bias resistors to minimize the power consumption. As the current flows from the collector to the emitter, it is amplified by the transistor and can be used to switch on and off various devices.

The UNR51A4G0L is a versatile device, offering a wide variety of applications, high switching speeds, and low power consumption. It is widely used in consumer electronic and automotive applications, providing excellent performance and reliability.

The specific data is subject to PDF, and the above content is for reference

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