UNR521100L Discrete Semiconductor Products |
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Allicdata Part #: | UNR521100LTR-ND |
Manufacturer Part#: |
UNR521100L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR521100L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SMini3-G1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR521100L transistor is a member of the single, pre-biased bipolar junction transistor (BJT) family. It is used in various electronic applications, such as amplifiers, power supplies, and voltage regulators. This article will discuss the application field and working principle of the UNR521100L.
Application Field
The UNR521100L has a wide range of applications. It is suitable for use in amplifiers and power supplies to provide power amplification and voltage regulation. The transistor is also commonly used in audio amplifiers and other audio equipment for its excellent noise suppression capabilities. It can also be used in digital circuits, such as microprocessors and computers, for both power amplification and digital processing.
The UNR521100L is also used in car audio systems and home theatre systems. The transistor provides good power output and wide frequency response, making it a popular choice for these applications. It can also be used in RF circuits, such as broadcast receivers and transmitters, as well as in microwave ovens.
Working Principle
The UNR521100L is a bipolar junction transistor (BJT). A BJT consists of three layers of doped semiconductor material, known as the emitter, base, and collector. The combination of materials and the doping process create a charge distribution such that the base and collector have opposite polarities. When voltage is applied between the emitter and collector, the charge distribution allows for current flow between them. This current flow is controlled by the voltage between the emitter and base.
Current flow can be amplified using the UNR521100L. When a small voltage is applied to the base, the current between the emitter and collector increases significantly. This increase in current results in power amplification. The UNR521100L is a single, pre-biased BJT, meaning that it is already biased when sold. This makes it easy to use and requires minimal setup.
The UNR521100L is also designed to provide excellent noise suppression capabilities. This is because of its double-diffused construction, which brings the current gain and frequency response to a higher level than normal. This makes the transistor ideal for use in audible circuits, such as amplifiers and receivers.
Conclusion
The UNR521100L is a single, pre-biased bipolar junction transistor that has a wide range of applications. It is most commonly used in amplifiers and power supplies, as well as in car audio systems and home theatre systems. The transistor provides excellent power amplification and noise suppression capabilities. Its double-diffused construction also gives it a higher current gain and frequency response, making it an ideal choice for audible applications.
The specific data is subject to PDF, and the above content is for reference
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