UNR511T00L Discrete Semiconductor Products |
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Allicdata Part #: | UNR511T00LTR-ND |
Manufacturer Part#: |
UNR511T00L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR511T00L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SMini3-G1 |
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UNR511T00L Application Field and Working Principle
The UNR511T00L is a single, pre-biased, bipolar junction transistor (BJT) designed for applcations in audio amplification and power switching. It is designed for use in audio amplifier and power switch applications, where its high frequency capability, low on-state resistance, and wide operating temperature range make it well-suited for these types of systems.
The UNR511T00L is an NPN transistor with a maximum collector-emitter voltage rating of 30V and a package size of 6-pin SOT23. It features a metal gate located between the base and emitter, enabling the device to operate at a much higher frequency than its non-metal gate counterparts.
The UNR511T00L’s pre-biased nature allows it to be used even when a load is present. This is because the bias current is supplied through the base-emitter junction when the gate voltage is not applied. This helps to reduce the time taken for the device to switch on and off and makes it an ideal choice for fast switching applications. It also reduces the amount of current draw from the circuit, reducing power consumption and heat dissipation.
When the UNR511T00L is placed into an audio amplifier or power switch circuit, it can operate in either the common emitter or common collector configuration. In the common emitter configuration, the device acts as an amplifier, with the base voltage controlling the collector current. In the common collector configuration, the device acts as a switch, with the base controlling the emitter current. The device’s low on-state resistance allows it to handle loads with higher current draw.
The UNR511T00L also has a wide operating temperature range between -55°C and 150°C, making it well-suited for use in environments where temperature has a significant effect on transistor performance. This feature helps to ensure that the device operates reliably in these extreme temperature conditions.
The UNR511T00L is a versatile and robust transistor, capable of operating at high frequencies and in extreme temperature conditions. Its pre-biased nature makes it ideal for use in audio amplifiers and power switches, allowing for the rapid switching of loads and reduced power consumption.
The specific data is subject to PDF, and the above content is for reference
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