UNR52A3G0L Discrete Semiconductor Products

Resistor - Emitter Base (R2):	47 kOhms
Supplier Device Package:	SMini3-F2
Package / Case:	SC-85
Mounting Type:	Surface Mount
Power - Max:	150mW
Frequency - Transition:	150MHz
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Series:	--
Resistor - Base (R1):	47 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	80mA
Transistor Type:	NPN - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction

The UNR52A3G0L is an NPN single pre-biased transistor with a wide range of applications. It is part of the family of transistors known as bipolar junction transistors (BJTs) and is a form of semiconductor device used for current amplification. This article will explain the application field, characteristics and working principle of the UNR52A3G0L transistor.

Application Field

The UNR52A3G0L is primarily used for line driving, low current switching and audio amplification. One of its most common uses is line driving, specifically for the connection between digital circuits and bipolar analogue circuits. This type of transistor is also used in audio amplifiers, where its high current gain allows it to drive large speaker loads with relatively low-power supply voltages.The UNR52A3G0L can also be used in low-current switching applications. It can be used as a switch in circuits such as relays and switching circuits, where its low power consumption and low switching voltage make it an ideal choice.

Characteristics

The UNR52A3G0L has an excellent current gain, with a typical collector-emitter saturation voltage of 0.4 V. In addition, it has a low power dissipation of 1 W, making it suitable for use in low-power applications. It also has a high collector-emitter current gain of hFE = 300 at 1 mA with a DC current gain of βDC = 25. The device can operate at a maximum collector current of 2 mA and can be operated at temperatures up to 125°C.

Working Principle

The UNR52A3G0L is an NPN transistor, meaning that the current flows from the collector to the emitter. This type of transistor is commonly used for current amplification, as the base current controls the larger collector-emitter current. In a practical circuit, the voltage between the base and the emitter is applied to the transistor’s base-emitter junction. This causes a small current to flow from the base to the emitter, which in turn causes a larger current to flow from the collector to the emitter. The ratio between the two currents is called the current gain, or hFE. The higher the hFE, the more amplification the transistor provides.The UNR52A3G0L transistor is particularly well suited for current amplification because it has a high current gain and low power dissipation. Its pre-biased nature allows it to switch on quickly and it can handle large loads with relative ease.

Conclusion

The UNR52A3G0L transistor is a NPN single pre-biased transistor that is widely used in low-current switching and audio amplification applications. It has a high current gain and low power dissipation, making it an ideal choice for many applications. It is also suitable for line driving, as its pre-biased nature allows it to switch on quickly and handle large loads with relative ease.

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