UNR5114G0L Allicdata Electronics

UNR5114G0L Discrete Semiconductor Products

Allicdata Part #:

UNR5114G0LTR-ND

Manufacturer Part#:

UNR5114G0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 150MW SMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR5114G0L datasheetUNR5114G0L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2
Description

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The UNR5114G0L transistor is a single, pre-biased Bipolar Junction Transistor (BJT) device. It is a PNP-type transistor with built-in resistors that can help simplify the circuit design and save time when designing circuits. It is offered in an SO8 package and has an IC rating of 400 mA, making it suitable for a wide range of applications.

In terms of application fields, the UNR5114G0L transistor can be used in a variety of applications, such as amplification circuits, switching circuits, power converters, power supplies, and motor controls. Its built-in resistors can help protect the transistor from overloads, while its fast switching speed makes it suitable for high-frequency applications. It can also be used as a pre-biased device in combination with a complementary NPN transistor, which can make it easier to design circuits and reduce their parts count.

The working principle of the UNR5114G0L is similar to that of other BJTs. It works by controlling the current flowing between collector and emitter; the base voltage controls the amount of current flowing. This type of transistor is primarily used as a switch since it can turn on and off quickly, and can also be used in combination with other transistors to form a Darlington configuration. This type of configuration allows for a high gain, which can be used to amplify signals or for other purposes.

In addition to its application fields and working principle, the UNR5114G0L also offers excellent electrical performance. It has a low on-resistance rating of 110 mW, which makes it suitable for use in low-power circuits. It has a wide temperature range, which makes it suitable for use in extreme environments. Its wide peak current rating of 400 mA also makes it suitable for use in high-power circuits.

The UNR5114G0L is a reliable and versatile transistor that can be used across a multitude of applications. Its fast switching speed, wide temperature range and high current rating make it suitable for various applications. Its built-in resistors can help protect the device from overloads, and its pre-biased design can reduce the number of components and simplify the circuit design.

The specific data is subject to PDF, and the above content is for reference

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