UNR5114G0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR5114G0LTR-ND |
Manufacturer Part#: |
UNR5114G0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR5114G0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 80MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-85 |
Supplier Device Package: | SMini3-F2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR5114G0L transistor is a single, pre-biased Bipolar Junction Transistor (BJT) device. It is a PNP-type transistor with built-in resistors that can help simplify the circuit design and save time when designing circuits. It is offered in an SO8 package and has an IC rating of 400 mA, making it suitable for a wide range of applications.
In terms of application fields, the UNR5114G0L transistor can be used in a variety of applications, such as amplification circuits, switching circuits, power converters, power supplies, and motor controls. Its built-in resistors can help protect the transistor from overloads, while its fast switching speed makes it suitable for high-frequency applications. It can also be used as a pre-biased device in combination with a complementary NPN transistor, which can make it easier to design circuits and reduce their parts count.
The working principle of the UNR5114G0L is similar to that of other BJTs. It works by controlling the current flowing between collector and emitter; the base voltage controls the amount of current flowing. This type of transistor is primarily used as a switch since it can turn on and off quickly, and can also be used in combination with other transistors to form a Darlington configuration. This type of configuration allows for a high gain, which can be used to amplify signals or for other purposes.
In addition to its application fields and working principle, the UNR5114G0L also offers excellent electrical performance. It has a low on-resistance rating of 110 mW, which makes it suitable for use in low-power circuits. It has a wide temperature range, which makes it suitable for use in extreme environments. Its wide peak current rating of 400 mA also makes it suitable for use in high-power circuits.
The UNR5114G0L is a reliable and versatile transistor that can be used across a multitude of applications. Its fast switching speed, wide temperature range and high current rating make it suitable for various applications. Its built-in resistors can help protect the device from overloads, and its pre-biased design can reduce the number of components and simplify the circuit design.
The specific data is subject to PDF, and the above content is for reference
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