UNR52AVG0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR52AVG0LTR-ND |
Manufacturer Part#: |
UNR52AVG0L |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR52AVG0L Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04680 |
Resistor - Emitter Base (R2): | 2.2 kOhms |
Supplier Device Package: | SMini3-F2 |
Package / Case: | SC-85 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 150MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1.5mA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 6 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 80mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The UNR52AVG0L is a single, pre-biased bipolar junction transistor (BJT). It is a three-terminal active device manufactured by United Research Corporation (URC). These transistors are available in a wide range of package types, including through-hole mounting, surface-mount, and SOIC packages.
The UNR52AVG0L has three terminals, namely emitter (E), base (B), and collector (C). The base (B) is typically connected to a control signal and connected together are the emitter (E) and collector (C), making the UNR52AVG0L an “active” device. Controlling the current of an active device requires an additional base current from an input source, usually a DC power source or a signal source, to adjust the voltage to the base-emitter junction.
By its nature, the UNR52AVG0L is a pre-biased transistor. That is, when the device is in its off-state, the base-emitter junction is biased in the forward direction, allowing a small current to flow from the base to the emitter. This pre-biasing not only increases the switching speed of the device, but also provides an enhanced immunity to sudden negative voltage transients on the input to the device. This allows the switching speed to stay consistent even with short circuit or load changes.
One of the most common applications of the UNR52AVG0L is in analog signal processing. By controlling the current in the device, an analog signal can be processed and manipulated in a variety of ways. For example, the device can be used to amplify, filter, or mix analog signals. The device is also used in systems to switch between discrete input signals and in RF signal amplification.
The working principle of the UNR52AVG0L is based on the phenomenon of current flow from the collector to the emitter. When a current is applied to the base of the device, it creates a small electric field at the charges of the base-emitter junction. This electric field affects the charges of the junction, allowing a current to flow from collector to the emitter. This current is controlled by the applied base current and can be used to process the analog signal.
The specific data is subject to PDF, and the above content is for reference
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