UNR511VG0L Allicdata Electronics

UNR511VG0L Discrete Semiconductor Products

Allicdata Part #:

UNR511VG0LTR-ND

Manufacturer Part#:

UNR511VG0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 150MW SMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR511VG0L datasheetUNR511VG0L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1.5mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2
Description

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UNR511VG0L is a bipolar junction transistor (BJT) single pre-biased device from Vishay Intertechnology. It is a hybrid power-video BJT which can be used for audio and video signal applications. This device offers an increased sourcing current of 8.6-9.6 mA, and a maximum peak gain of 0.610. UNR511VG0L is also designed for use in low noise and low distortion high gain applications.

The UNR511VG0L has an important feature known as pre-biased capability. This feature allows the device to be used in applications where a non-uniform input signal voltage is likely to be seen. With this feature, the device is capable of handling a wide range of signal voltages and ensures a uniform gain across the entire range. Additionally, this device features low leakage current, high gain, and low thermal resistance.

The device also provides excellent shielding from electrostatic discharge (ESD) and other electromagnetic disturbances. The device has a typical power dissipation rating of 9 Watts. It has a maximum operating temperature rating of 150°C and a storage temperature range of -65°C to 150°C. The package includes a hard plastic SOT-223 package.

The working principle of the UNR511VG0L is based on the principle of transistor action. A transistor acts as a switch which can be switched on or off to control the amount of current that flows through it. The UNR511VG0L features a monolithic NPN Darlington configuration which provides an extremely high switching speed and increased output current. This device also features voltage gain of 0.610 and a non-saturating linear curve.

The UNR511VG0L is widely used in audio and video applications where high speed and low distortion is a priority. It is widely used in applications such as low noise amplifiers, power amplifiers, and low distortion multiplexers. In addition, this device is widely used in automotive, medical and telecommunications applications.

In conclusion, the UNR511VG0L is a bipolar junction transistor single pre-biased device designed for use in audio and video applications requiring high speed and low distortion. The device features a monolithic NPN Darlington configuration which provides an extremely high switching speed, increased output current, voltage gain of 0.610, and a non-saturating linear curve. The device is widely used in audio and video, automotive, medical, and telecommunications applications.

The specific data is subject to PDF, and the above content is for reference

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