UNR52A0G0L

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors – Bipolar (BJT) – Single, Pre-Biased are transistors that are pre-biased and are designed to provide a stable, low offset voltage output. This type of transistor has a high level of stability that is ideal for applications requiring precise voltage or current control. The UNR52A0G0L is a single, pre-biased n-channel transistor with a low offset voltage which provides stability and accuracy.

The UNR52A0G0L transistor is primarily used in applications such as digital power supplies, audio amplifiers, receivers, and high frequency switching circuits. This device has a low offset voltage of 0.1V, which gives it superior performance in noise immunity and power dissipation. The transistor also features high current gain and low linearity, which makes it well suited for use in demanding applications.

This powerful device is constructed with a simple construction consisting of two parts; the emitter and the base. The emitter is a collector-gate bit and is connected to the base of the transistor. A voltage is applied to the emitter so that electrons are released which then flow through the base to the collector. The base-emitter junction is the active region where the output current is formed.

The working principle of this device is quite simple. When a positive voltage is applied to the emitter, the electrons from the emitter move through the base to the collector and the output current is formed. The amount of current flowing is controlled by the input voltage applied to the emitter. Depending on the amount of the current, the output voltage at the collector is either high or low. The current gain of the transistor is determined by the input and output voltages.

The features of the UNR52A0G0L transistor make it ideal for a variety of applications. Its low offset voltage and high current gain make it an excellent choice for audio amplifiers and receivers. Additionally, its ability to withstand high frequency switching current can make it a great choice for high frequency switching circuits. Furthermore, the device’s low linearity and the easy construction of the emitter-base junction make it ideal for use in digital power supplies.

In conclusion, the UNR52A0G0L is a single, pre-biased n-channel transistor with a low offset voltage which provides excellent performance in noise immunity and power dissipation. The device’s low offset voltage and high current gain make it an excellent choice for audio amplifiers and receivers, and its ability to withstand high frequency switching current can make it a great choice for high frequency switching circuits. Furthermore, its low linearity and easy construction of the emitter-base junction make it ideal for use in digital power supplies. This powerful device is designed to provide a stable, low offset voltage output and is a great choice for applications requiring precision current or voltage control.

The specific data is subject to PDF, and the above content is for reference