UNR5217G0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR5217G0LTR-ND |
Manufacturer Part#: |
UNR5217G0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR5217G0L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-85 |
Supplier Device Package: | SMini3-F2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
UNR5217G0L is a pre-biased single bipolar junction transistor (BJT) from RENESAS, an international electronic component manufacturer. It is part of the company’s portfolio of advanced semiconductor technology and is marketed for use in applications such as audio amplifiers, switching power supplies and automotive electronics.
Features
The UNR5217G0L offers a range of unique features that make it well suited for its range of applications. It has a low on-resistance of 3.7 ohms and a maximum voltage of 120V. It also has a saturation current of 0.5 A, a breakdown voltage of 250V and a hFE linearly-fitted in the collector current range of 0.6mA to 6mA. It is available in an industry standard TO-220 package with six leads allowing for a wide range of mechanical mounting and thermal dissipation options.
Working Principle
A BJT is a solid-state semiconductor device composed of three layers of semiconductor material. The layers form a junction whose characteristics are determined by the amount of current passing through it. When the base-emitter junction is forward biased, excess current will flow from the collector to the emitter, creating a small reverse bias that produces a large increase in current gain, or hFE. This increase in hFE allows for the amplification of audio or other signals.
Application Field
Due to its low on-resistance and high current gain, the UNR5217G0L is well suited for audio amplifier circuits. It can be used to achieve a high sound quality when coupled with a high-power output stage and input stage. The UNR5217G0L is also used in switching power supplies and automotive electronics. It is ideal for switching power supplies due to its large current gain and speed of operation. It can also help to improve automotive electronics such as fuel injection systems and airbag systems, due to its small size, high reliability, and precision current gain.
Conclusion
The UNR5217G0L is a pre-biased single bipolar junction transistor from RENESAS. It offers a low on-resistance, high current gain, and a range of unique features that make it well suited for applications such as audio amplifiers, switching power supplies, and automotive electronics. It is available in an industry standard package and fits a wide range of mechanical mounting and thermal dissipation options.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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UNR52A6G0L | Panasonic El... | 0.05 $ | 3000 | TRANS PREBIAS NPN 150MW S... |
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