UNR521L00L Discrete Semiconductor Products |
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Allicdata Part #: | UNR521L00LTR-ND |
Manufacturer Part#: |
UNR521L00L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR521L00L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SMini3-G1 |
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UNR521L00L application field and working principle
The UNR521L00L is a bipolar single pre-biased transistor designed for applications such as high voltage, voltage control and light-source heating. This transistor is designed with a base voltage divider, a current gain of up to 25 and a high-voltage collector-emitter breakdown voltage of 170 volts.
Applications
The application field of UNR521L00L includes memory modules, micro-power and precision electrical measuring instruments as well as high voltage relay and light source heating.
Working principle
A bipolar transistor, such as an UNR521L00L pre-biased transistor, is a three-terminal active component composed of two different semiconductors, NPN (Negative Positive Negative) or PNP (Positive Negative Positive). Its current gain is determined by the ratio of collector current over base current, between 0 and approximately 25 for UNR521L00L.
The pre-bias in the UNR521L00L allows the manufacturing process to be simplified and highercurrent gain achieved. Pre-biasing is a way to provide a bias voltage that is proportional to the relative transistor mobility between the base and collector.
The UNR521L00L is designed to have a forward bias between the base and emitter, with the base connected to a biased voltage and the emitter connected to ground. This forward bias controls the current flow between the collector and emitter.
The high-voltage collector-emitter breakdown voltage of the UNR521L00L ensures that it can be used in applications requiring a high voltage.
Conclusion
The UNR521L00L is a bipolar single pre-biased transistor designed for applications such as high voltage, voltage control and light-source heating. Its application field includes memory modules, micro-power and precision electrical measuring instruments as well as high voltage relay and light source heating. The pre-bias allows the manufacturing process to be simplified and higher current gain achieved. The high-voltage collector-emitter breakdown voltage ensures that it can be used in applications requiring a high voltage.
The specific data is subject to PDF, and the above content is for reference
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UNR5214G0L | Panasonic El... | 0.05 $ | 3000 | TRANS PREBIAS NPN 150MW S... |
UNR5215G0L | Panasonic El... | 0.05 $ | 3000 | TRANS PREBIAS NPN 150MW S... |
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UNR51ANG0L | Panasonic El... | 0.05 $ | 3000 | TRANS PREBIAS PNP 150MW S... |
UNR52A3G0L | Panasonic El... | 0.05 $ | 3000 | TRANS PREBIAS NPN 150MW S... |
UNR52A6G0L | Panasonic El... | 0.05 $ | 3000 | TRANS PREBIAS NPN 150MW S... |
UNR52A8G0L | Panasonic El... | 0.05 $ | 3000 | TRANS PREBIAS NPN 150MW S... |
UNR52AFG0L | Panasonic El... | 0.05 $ | 3000 | TRANS PREBIAS NPN 150MW S... |
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