UNR5111G0L Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	80MHz
Power - Max:	150mW
Mounting Type:	Surface Mount
Package / Case:	SC-85
Supplier Device Package:	SMini3-F2

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<p>The UNR5111G0L is a single, gas-filled, pre-biased Bipolar Junction Transistor (BJT) that has become a staple in modern transistor technology. As the name suggests, this device is a pre-biased BJT, meaning that the transistor gate or base is already superimposed by a DC bias voltage. This pre-biasing of the gate or base makes it much easier to control the device and improves its overall efficiency.</p><p>The UNR5111G0L can be easily incorporated into existing circuitry, as the device is designed to be compatible with a wide variety of technologies and process flows. This device is well-suited for a variety of applications, ranging from heating and cooling devices, such as industrial heating systems, to switching and control applications in robotics, medical technology, and military systems.</p><p>The UNR5111G0L’s unique design enables it to be incorporated into virtually any circuit type, due to its compatibility with a wide array of technologies and process flows. This makes the device well-suited for use in high-frequency, high-speed switching applications, such as those found in communication systems, avionics, and test and measurement systems. This device is also suitable for use in power electronics applications, such as motor control, as it can withstand higher reverse blocking voltage, dissolve high currents, and handle high transient spikes.</p><p>The working principle of the UNR5111G0L can be described as follows: the device consists of two separate P-N junction diodes that are formed by a semiconductor material, such as silicon, germanium, or carbon. The two diodes are connected in opposite directions and each is connected to a terminal of a voltage source. When a voltage is applied to the gate of the device, the voltage applied to the base reaches a level at which the base-emitter junction will become forward biased. This bias will activate the base of the transistor, allowing current to flow from the collector to the emitter.</p><p>The UNR5111G0L is an ideal choice for a wide range of applications, due to its pre-biasing design, efficient operation, and compatibility with a wide variety of technologies and process flows. This device can be easily incorporated into existing circuitry, making it ideal for use in switching and control applications, as well as in communications, avionics, and test and measurement systems. Additionally, the device’s pre-biasing design makes it capable of handling high transient spikes and high reverse blocking voltages, allowing it to be used effectively in power electronics applications, such as motor control.</p>

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