UNR511700L Discrete Semiconductor Products

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The UNR511700L is a single pre-biased bipolar junction transistor (BJT),manufactured by UTC. It is designed to operate in an industry common NPNconfiguration, meaning it can be used in a wide variety of applications. Thistransistor offers several advantages over other BJTs, such as a larger currenthandling capacity and higher breakdown voltage. In addition, it is pre-biasedfor ease of use and can be used in low power applications.

Application field:

The UNR511700L can be used in a wide variety of applications, from motorcontrols to data communications. It is commonly used in switch mode powersupplies, amplifiers, motor controllers, and temperature controllers. Inaddition, its low power consumption makes it suitable for use in battery-powereddevices.

Working principle:

The UNR511700L is an NPN transistor, meaning it uses two semiconductor layersto create a junction. When a voltage is applied to the base, it causes achange in the electron movement of the two layers. This creates a switch, whichcontrols the flow of current in a circuit.

The UNR511700L is pre-biased, which means its base-to-emitter voltage isalready set, making it easier to use in applications. Additionally, itsgate-emitter voltage is also preset, allowing for faster circuit design.

In operation, the UNR511700L can operate in either switch mode or amplifiermode. In switch mode, it alternately switches the current in an on/offconfiguration. This allows it to be used as a switch in a variety ofapplications. In amplifier mode, it amplifies the input signal to a highervoltage or current level.

The UNR511700L is able to handle currents of up to 500mA and a maximumvoltage of 30V. It is also capable of handling frequencies up to 1MHz.

In conclusion, the UNR511700L is an ideal solution for a wide range ofapplications in the switch and amplifier markets. Its pre-biased operationmakes it easy to use, and its large current and voltage handling capacityensure its suitability for use in many different applications. It is alsocapable of operating at high frequencies, making it suitable for use inhigh-speed devices.

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