UNR511800L Discrete Semiconductor Products |
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Allicdata Part #: | UNR511800LTR-ND |
Manufacturer Part#: |
UNR511800L |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR511800L Datasheet/PDF |
Quantity: | 12000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
3000 +: | $ 0.04680 |
6000 +: | $ 0.04212 |
Specifications
Resistor - Emitter Base (R2): | 5.1 kOhms |
Supplier Device Package: | SMini3-G1 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 80MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 510 Ohms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Description
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<p>The <strong>UNR511800L</strong> is a single pre-biased NPN bipolar junction transistor (BJT) from the ULTRA series catalog from UNI-TECH. It has a wide variety of applications due to its robust design and high power efficiency.</p><p>The UNR511800L has a pre-biased design, meaning that the device has an internal bias resistor, which allows for easy operation with minimal user intervention. This makes the device a popular choice for both commercial and residential applications, such as low power audio amplifiers, small motor control circuits, and signal switching applications.</p><p>The UNR511800L is designed to operate in a wide range of conditions, and is capable of handling high currents and voltages. It has a maximum collector-emitter voltage of 800V, a maximum collector current of 1A, and a maximum power dissipation of 7.2W.</p><p>The UNR511800L operates using the NPN bipolar junction transistor (BJT) connection. The NPN connection involves three parts: a base, a collector, and an emitter. The base is the switching device, and includes two diodes, a collector, and an emitter. The two diodes act as an electrical switch, filtering out any unwanted currents, and allowing current to flow only when needed.</p><p>The UNR511800L also includes a built-in resistor which is used to bias the transistor. This resistor keeps the current flowing through the transistor balanced, and prevents the device from becoming over-heated. The resistor can be adjusted to fit the desired specifications for the device.</p><p>The UNR511800L is a versatile transistor with a wide range of applications. It is most commonly used in devices such as audio amplifiers, motor control circuits, clocking devices, and signal switching devices. It also has applications in robotics, automation, and control systems.</p><p>The UNR511800L is a reliable and high-performance NPN bipolar junction transistor (BJT) that is designed for use in a wide variety of applications. It has a pre-biased design and built-in resistor for easy operation, and is capable of handling high currents and voltages. The UNR511800L is a popular choice for both commercial and residential applications.</p>The specific data is subject to PDF, and the above content is for reference
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