UNR511900L Discrete Semiconductor Products |
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Allicdata Part #: | UNR511900LTR-ND |
Manufacturer Part#: |
UNR511900L |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | UNR511900L Datasheet/PDF |
Quantity: | 6000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
3000 +: | $ 0.04680 |
6000 +: | $ 0.04212 |
Resistor - Emitter Base (R2): | 10 kOhms |
Supplier Device Package: | SMini3-G1 |
Package / Case: | SC-70, SOT-323 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 80MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 1 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The UNR511900L is a single, pre-biased, bipolar junction transistor (BJT) – essentially an electronic switch that uses the properties of a semiconductor material to amplify, switch or control a current or to modulate a signal. The UNR511900L is designed to have minimal gate-charge and gate-capacitance, allowing for faster switching times and increased noise immunity in high-speed applications. Additionally, the UNR511900L is a stable device and does not require a heatsink when operated under normal conditions.
The most common application of the UNR511900L is as an electronic switch. The UNR511900L has two terminals – the emitter and collector – and a third controlling terminal, the base. A small change in the base-to-emitter voltage (VBE) can cause a large change in the collector-to-emitter current (Ic). This current can then be used to switch and control other electronic components, such as transistors, capacitors, resistors, and so on.
The UNR511900L is also commonly used as a voltage amplifier. This is accomplished by increasing or decreasing the current flow through the transistor. The current flow is controlled by the base-to-emitter voltage (VBE) and, in turn, the collector-to-emitter voltage (VCE). When the current flow is increased, the voltage across the collector and emitter is increased (this is known as “forward-biasing”). Conversely, when the current flow is decreased, the voltage across the collector and emitter is decreased (this is known as “reverse-biasing”). By controlling the current flow, the UNR511900L can be used as an amplifier to increase or decrease the voltage of a signal.
The UNR511900L can also be used as a current regulator. This is accomplished by controlling the voltage across the collector and emitter (VCE). When the voltage across the collector and emitter is increased, the current flow is increased and vice-versa. By controlling the voltage across the collector and emitter, the current flow through the circuit can be regulated.
Due to its small size and low power consumption, the UNR511900L is ideally suited for use in high-speed, low-noise applications such as audio and automotive circuits, industrial control systems and home entertainment. It is also used in medical imaging devices, telecom switches, power converters, and other digital components.
In summary, the UNR511900L is a single, pre-biased, bipolar junction transistor that is used for a wide range of applications. Its advantages include low power consumption, fast switching time, high noise immunity and stability under normal conditions. The UNR511900L is a versatile device that can be used as an electronic switch, voltage amplifier, and current regulator.
The specific data is subject to PDF, and the above content is for reference
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