UNR521500L Discrete Semiconductor Products |
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Allicdata Part #: | UNR521500LTR-ND |
Manufacturer Part#: |
UNR521500L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR521500L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SMini3-G1 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR521500L is a single pre-biased bipolar junction transistor (BJT) that combines several capabilities into one single integrated circuit (IC). It is a particularly useful device for general-purpose applications, and is widely used in both commercial and scientific equipment. This type of BJT is particularly useful because it is a low-power and highly efficient transistor, making it ideal for a wide range of applications.
The UNR521500L is designed with a single-emitter, single-base and single-collector configuration. This configuration allows it to be used as a current amplifier, power amplifier, voltage regulator and voltage follower, among other functions. The single-emitter construction means that the UNR521500L can be wired either as a resistor-coupled amplifier or as a diode-connected amplifier. The single-base design gives the transistor an extra low-power operation which makes it very efficient at dissipating small amounts of heat. The single-collector design means that the transistor can be used as a voltage regulator and as a power amplifier.
The UNR521500L works by regulating the amount of current that flows through it. It does this by controlling the amount of voltage applied at its base. When the base voltage is increased, the transistor allows more current to pass through it. Conversely, when the base voltage is decreased, the transistor allows less current to pass through it. This makes the UNR521500L an ideal choice for voltage regulation, as it can easily adjust the output current in response to varying input voltages. Additionally, the transistor can also be used as a power amplifier, as it can provide amplification of both low- and high-power signals.
The UNR521500L is ideal for applications where precise, efficient and low-power operation is required. It is especially suited for use in power amplifiers, voltage regulators, motor controllers and in other industrial applications such as switching power supplies and frequency converters. Additionally, it can also be used in more general-purpose applications, such as in amplifiers, audio equipment and in other consumer electronics.
In summary, the UNR521500L is a single pre-biased bipolar junction transistor that is ideally suited for both power and general-purpose applications. The single-emitter, single-base and single-collector configuration makes it ideal for use as both a current amplifier, power amplifier, voltage regulator and voltage follower. Additionally, its low-power and efficient operation means it is a great choice for applications that require precise, low-power and efficient operation. As such, the UNR521500L is a highly useful component for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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