UNR5215G0L Discrete Semiconductor Products |
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Allicdata Part #: | UNR5215G0LTR-ND |
Manufacturer Part#: |
UNR5215G0L |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN 150MW SMINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | UNR5215G0L Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04680 |
Resistor - Base (R1): | 10 kOhms |
Supplier Device Package: | SMini3-F2 |
Package / Case: | SC-85 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 150MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Series: | -- |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The UNR5215G0L is a single-bipolar transistor pre-biased junction component, which is widely used in a range of electronics applications. It is a pre-biased component, meaning that it has a fixed state of polarization and current flowing through it prior to being connected to other components. This makes it an ideal choice for controlling the input or output of various circuits, as the component is already in a stable position before it is hooked up.
The UNR5215G0L is PNP-type transistor and features a rating for a collector-emitter voltage of up to 175 volts, a temperature range of -55 to +125 degrees Celsius, and a dc current gain of 600. It is also relatively small in size, making it ideal for use in small electronics projects. This component is also used in a variety of consumer electronics such as televisions, radios, CB radios, and more.
The UNR5215G0L has a unique construction, consisting of emitter-base, base-collector and base-emitter junctions. The emitter-base junction is a PIN diode, while the base-collector and base-emitter junctions are made up of two independent, reverse biased bipolar transistors. These two junctions work together to provide the pre-biased stability which the UNR5215G0L is known for. This component also contains two diode junctions which allow it to provide protection against excessive current.
The UNR5215G0L\'s working principle is based on the physics of current flow through a semiconductor material. The transistor\'s base junction acts as a gate, allowing current to pass through it when it is forward biased, and blocking current when it is reverse biased. The current flow from the collector to the emitter is then controlled by the base junction, as the base-emitter junction is simultaneously forward biased. This process is known as bipolar transistor action, and is used in many electronics applications.
In conclusion, the UNR5215G0L is a single, pre-biased bipolar junction transistor. It is well-suited for use in a variety of electronics projects, due to its pre-biased design, wide voltage rating, and small size. The component also ensures protection against excessive current, making it an ideal choice for controlling input or output from various circuits. The UNR5215G0L\'s working principle is based on the logic of current flow through a semiconductor material, as well as the bipolar transistor action. Overall, the UNR5215G0L is an excellent choice for a range of electronics applications.
The specific data is subject to PDF, and the above content is for reference
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