UNR52AFG0L Allicdata Electronics

UNR52AFG0L Discrete Semiconductor Products

Allicdata Part #:

UNR52AFG0LTR-ND

Manufacturer Part#:

UNR52AFG0L

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN 150MW SMINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: UNR52AFG0L datasheetUNR52AFG0L Datasheet/PDF
Quantity: 3000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.04680
Stock 3000Can Ship Immediately
$ 0.05
Specifications
Resistor - Emitter Base (R2): 10 kOhms
Supplier Device Package: SMini3-F2
Package / Case: SC-85
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 150MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Series: --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 80mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The UNR52AFG0L is a single, pre-biased bipolar junction transistor (BJT) that offers superior performance in a wide range of applications. The device is a high-performance BJT, typically used in applications such as audio systems, video systems, computer systems, and automotive electronics. The UNR52AFG0L is designed to provide reliable operation with minimal power consumption and has a wide operating temperature range of -55°C to +150°C.

A BJT consists of three terminals, the collector, the base and the emitter, which are connected to a number of semiconductor layers, forming the transistor. The current in the transistor is controlled by the amount of current flowing through the base which, in turn, causes the voltage drop across the collector-emitter junction.

The UNR52AFG0L is a pre-biased BJT, meaning that it is operational without the need for an external current source. Instead, a pre-set amount of current, known as the bias current, is set into the device from the start, allowing it to begin operation immediately. This bias current, determined by the device itself, produces a voltage drop across the collector-emitter junction, which then further controls the current in the device.

The UNR52AFG0L is a single-mode transistor, meaning that it can only be used as a single device, instead of multiple transistors connected in parallel. This allows for more precise operation, as the current through the transistor is directly proportional to its bias current. Additionally, single-mode transistors require less power than other BJTs, making them ideal for low-power applications.

The performance of the UNR52AFG0L is further enhanced through its NPN configuration, which offers superior durability, stability and reliability. The device has a high breakdown voltage and can handle a wide range of temperature ranges, making it suitable for a range of applications.

The UNR52AFG0L is a reliable, efficient, and versatile device that is suitable for a variety of applications. It is well suited for audio systems, video systems, computer systems, and automotive electronics, where it can be used to improve overall system performance. Additionally, its low power consumption and wide operating temperature range make it an ideal choice for applications with limited power or temperature constraints.

The specific data is subject to PDF, and the above content is for reference

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