-40 to 85c, 2016, 25ppm, 1.8v, 5 - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
SSM3J108TU(TE85 L)-ND	SSM3J108TU(TE85 L)	Toshiba Semiconductor and Storage	View more Series: U-MOSIII Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Rds On (Max) @ Id, Vgs: 158 mOhm @ 800mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	1000 Order	1+: $0
SI5475DC-T1-E3- ND	SI5475DC-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 31 mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 1mA (Min) Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Vgs (Max): 8V Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET Package / Case: 8-SMD, Flat Lead	1000 Order	--
AO5401EL-ND	AO5401EL	Alpha & Omega Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 800 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 0.9V @ 250A Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V Power Dissipation (Max): 280mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-89-3 Package / Case: SC-89, SOT-490	1000 Order	--
DMG2301LK-7DITR -ND	DMG2301LK-7	Diodes Incorporated	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 160 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 10V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 156pF @ 6V Power Dissipation (Max): 840mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
785-1090-2-ND	AO7412	Alpha & Omega Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250A Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 15V Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 Package / Case: 6-TSSOP, SC-88, SOT-363	1000 Order	--
DMN3027LFG-13DI -ND	DMN3027LFG-13	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 18.6 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250A Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Vgs (Max): 25V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V Power Dissipation (Max): 1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerWDFN	1000 Order	--
NTZS3151PT5G-ND	NTZS3151PT5G	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 860mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 150 mOhm @ 950mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 16V Power Dissipation (Max): 170mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-563 Package / Case: SOT-563, SOT-666	1000 Order	1+: $0
SI3433BDV-T1-E3 TR-ND	SI3433BDV-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.6A, 4.5V Vgs(th) (Max) @ Id: 850mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Vgs (Max): 8V Power Dissipation (Max): 1.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	1000 Order	--
SI8402DB-T1-E1C T-ND	SI8402DB-T1-E1	Vishay Siliconix	View more Series: TrenchFET Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 37 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Vgs (Max): 8V Power Dissipation (Max): 1.47W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA, CSPBGA	1000 Order	--
SI1307EDL-T1-GE 3TR-ND	SI1307EDL-T1-GE 3	Vishay Siliconix	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 850mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 290 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250A (Min) Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs (Max): 8V Power Dissipation (Max): 290mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 Package / Case: SC-70, SOT-323	1000 Order	--
AO7414_001-ND	AO7414_001	Alpha & Omega Semiconductor Inc.	View more Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 62 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 Package / Case: SC-70, SOT-323	1000 Order	1+: $0
AO3413L-ND	AO3413L	Alpha & Omega Semiconductor Inc.	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 97 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V Power Dissipation (Max): 1.4W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
CPH3356-TL-WOST R-ND	CPH3356-TL-W	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 137 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.3nC @ 4.5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CPH Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	--
BSD816SNL6327HT SA1TR-ND	BSD816SNL6327HT SA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 2.5V Vgs(th) (Max) @ Id: 950mV @ 3.7A Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 2.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT363-6 Package / Case: 6-VSSOP, SC-88, SOT-363	1000 Order	1+: $0
SI2312BDS-T1-E3 TR-ND	SI2312BDS-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 31 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 850mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Vgs (Max): 8V Power Dissipation (Max): 750mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	39000 Order	--
SQ2315ES-T1_GE3 TR-ND	SQ2315ES-T1_GE3	Vishay Siliconix	View more Series: Automotive, AEC-Q101, TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 4V Power Dissipation (Max): 2W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3 Base Part Number: SQ2315	1000 Order	--
SSM3J112TULF-ND	SSM3J112TU,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 390 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.8V @ 100A Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 86pF @ 15V Power Dissipation (Max): 800mW (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	1000 Order	3000+: $0.0643
STD150NH02L-1-N D	STD150NH02L-1	STMicroelectronics	View more Series: STripFET III Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250A Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4450pF @ 15V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
NTJS3157NT2-ND	NTJS3157NT2	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 400mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88/SC70-6/SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	1000 Order	1+: $0
SI7407DN-T1-E3- ND	SI7407DN-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 9.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 12 mOhm @ 15.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 400A Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V Vgs (Max): 8V Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK 1212-8 Package / Case: PowerPAK 1212-8	1000 Order	1+: $0
SI1012R-T1-GE3T R-ND	SI1012R-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Vgs (Max): 6V Power Dissipation (Max): 150mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75A Package / Case: SC-75A	27000 Order	--
DMN62D0LFD-7DIT R-ND	DMN62D0LFD-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 310mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Rds On (Max) @ Id, Vgs: 2 Ohm @ 100mA, 4V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 500nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 25V Power Dissipation (Max): 480mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: X1-DFN1212-3 Package / Case: 3-UDFN	36000 Order	--
SI4368DY-T1-GE3 -ND	SI4368DY-T1-GE3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250A Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 8340pF @ 15V Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	2500+: $1.1178
1727-2707-2-ND	PMV65UNER	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 73 mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 291pF @ 10V Power Dissipation (Max): 490mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	3000+: $0.058
BSL802SNH6327XT SA1-ND	BSL802SNH6327XT SA1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 2.5V Vgs(th) (Max) @ Id: 0.75V @ 30A Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 2.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 1347pF @ 10V Power Dissipation (Max): 2W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSOP6-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	1000 Order	3000+: $0.1474
STD70N02L-1-ND	STD70N02L-1	STMicroelectronics	View more Series: STripFET III Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250A Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 16V Power Dissipation (Max): 60W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
SI7485DP-T1-E3C T-ND	SI7485DP-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 20A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 5V Vgs (Max): 8V Power Dissipation (Max): 1.8W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SO-8 Package / Case: PowerPAK SO-8	1000 Order	--
SI5433BDC-T1-GE 3TR-ND	SI5433BDC-T1-GE 3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 37 mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Vgs (Max): 8V Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET Package / Case: 8-SMD, Flat Lead	1000 Order	--
568-7533-2-ND	PMV16UN,215	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 18 mOhm @ 5.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V Power Dissipation (Max): 510mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
DMP21D0UT-7DITR -ND	DMP21D0UT-7	Diodes Incorporated	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 590mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 495 mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 1.54nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V Power Dissipation (Max): 240mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	36000 Order	--
1727-2320-2-ND	PMZ350UPEYL	Nexperia USA Inc.	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 450 mOhm @ 300mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250A Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 127pF @ 10V Power Dissipation (Max): 360mW (Ta), 3.125W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1006-3 Package / Case: SC-101, SOT-883	10000 Order	--
NX2301PVL-ND	NX2301PVL	Nexperia USA Inc.	View more Series: Automotive, AEC-Q101 Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 120 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 6V Power Dissipation (Max): 400mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	10000+: $0.0416
SIA439EDJ-T1-GE 3TR-ND	SIA439EDJ-T1-GE 3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 69nC @ 8V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Operating Temperature: -50C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK SC-70-6 Single Package / Case: PowerPAK SC-70-6	1000 Order	--
SI5433BDC-T1-E3 TR-ND	SI5433BDC-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 37 mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Vgs (Max): 8V Power Dissipation (Max): 1.3W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET Package / Case: 8-SMD, Flat Lead	1000 Order	--
TPC8115(TE12L,Q ,M)-ND	TPC8115(TE12L,Q ,M)	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 10 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 200A Gate Charge (Qg) (Max) @ Vgs: 115nC @ 5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 9130pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	1000 Order	1+: $0
SI1405DL-T1-E3T R-ND	SI1405DL-T1-E3	Vishay Siliconix	View more Series: TrenchFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 125 mOhm @ 1.8A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250A (Min) Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Vgs (Max): 8V Power Dissipation (Max): 568mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363	1000 Order	1+: $0
MCH6436-TL-W-ND	MCH6436-TL-W	ON Semiconductor	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 34 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V Power Dissipation (Max): 1.5W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88FL/MCPH6 Package / Case: 6-SMD, Flat Leads	1000 Order	3000+: $0.1606
568-6531-2-ND	PMFPB6532UP,115	NXP USA Inc	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 70 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 520mW (Ta), 8.3W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020-6 Package / Case: 6-UDFN Exposed Pad	1000 Order	1+: $0
568-7416-2-ND	PMN23UN,135	NXP USA Inc	View more Series: TrenchMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 6.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 28 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 10V Power Dissipation (Max): 1.75W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	1000 Order	1+: $0
IRF7702GTRPBFTR -ND	IRF7702GTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 14 mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 81nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 10V Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	1000 Order	1+: $0

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