Allicdata Part #: | SI7407DN-T1-E3-ND |
Manufacturer Part#: |
SI7407DN-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 12V 9.9A PPAK 1212-8 |
More Detail: | P-Channel 12V 9.9A (Ta) 1.5W (Ta) Surface Mount Po... |
DataSheet: | SI7407DN-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 400µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 59nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 15.6A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 9.9A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI7407DN-T1-E3 is a unique type of transistor. It is a single field effect transistor (FET) that is designed specifically to meet the needs of the digital age. This device is able to amplify or switch signals and control the current flow through a circuit. It is a form of semiconductor device, which is designed for use in applications that require high speeds, low power consumption, and low noise levels.
The SI7407DN-T1-E3 is a single-gate Low-Voltage MOSFET (LV-MOSFET) from Vishay Siliconix. It is a N-Channel Enhancement-Mode MOSFET. This type of transistor has a wide range of uses; it can be used for many different types of applications, such as for switching circuits, voltage level shifters, power-on reset circuits, and more. Additionally, it can also be used as an amplifier, allowing it to transmit signals between two devices.
The two main characteristics of the SI7407DN-T1-E3 are its low threshold voltage and low on-resistance. The low threshold voltage of this transistor allows the device to turn on more quickly and efficiently. The low on-resistance of this FET enables it to handle higher currents, which makes it ideal for applications that require fast switching, such as digital circuits. This makes it suitable for use in high-speed switching applications. It also has a good figure of merit (FOM) and a low gate charge.
The working principle of the SI7407DN-T1-E3 requires the gate voltage being applied to the device, which enables the FET to turn on and allow current to flow through it. The gate voltage is used to control the flow of current through the device, and the type of signal that the transistor amplifies or switches is determined by the application. The transistor can be used in many different types of applications, such as for transistor-based logic circuits, various types of power regulation and motor control applications, audio and video signal amplifiers, and more.
The SI7407DN-T1-E3 is available in a few different package and pin configurations. It is a high-voltage, low-current device with a wide range of capabilities and applications. The device is capable of operating at a wide range of temperatures and is designed to be highly reliable. It is an ideal device for a variety of digital and power applications.
In conclusion, the SI7407DN-T1-E3 is a single-gate Low-Voltage MOSFET from Vishay Siliconix. This FET device is suitable for use in high-speed applications and is available in a few different package and pin configurations. It has a number of advantages compared to other types of FETs, such as its low threshold voltage, low on-resistance, good figure of merit and low gate charge. The device is capable of amplifying and switching signals, controlling currents, and can be used in a number of different applications.
The specific data is subject to PDF, and the above content is for reference
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