STD70N02L-1 Allicdata Electronics
Allicdata Part #:

STD70N02L-1-ND

Manufacturer Part#:

STD70N02L-1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 25V 60A IPAK
More Detail: N-Channel 25V 60A (Tc) 60W (Tc) Through Hole I-PAK
DataSheet: STD70N02L-1 datasheetSTD70N02L-1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: STripFET™ III
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 16V
FET Feature: --
Power Dissipation (Max): 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-PAK
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Description

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The STD70N02L-1 is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). It is a single device, meaning it is composed of only one MOSFET. MOSFETs are transistors that are controlled by the voltage applied to their gate electrode, allowing the circuit to switch current on or off. The STD70N02L-1 is specifically used where high-side switching is required and is capable of controlling current of up to 60V and 30 amps.The MOSFET is a popular choice because of its low input current requirements and good performance at high frequencies. It is also very useful for operation in power circuits, because it is much easier to switch at high voltages. The STD70N02L-1 is particularly well-suited for applications where compact size and efficient operation are important factors.The STD70N02L-1 can be applied in a variety of different circuit applications, including motor control, power conversion, audio power amplifier, and digital control systems. It is also commonly used in automotive systems and other industrial applications. The device can be used for a variety of high-side switch control applications, including solenoid or motor drivers, LED drivers, and power supplies.The working principle of the MOSFET is based on the principle of charge carriers. When the voltage applied to the gate is low, the transistor stays in an “open” state and allows current to flow freely. When the voltage is increased, a depletion region is created around the gate and this barrier acts as a “closed” switch, preventing electron flow. This allows the device to be used as an efficient switch in a variety of applications.Practically, the STD70N02L-1 is operated by varying the applied voltage and current. The gate is driven by a PWM (pulse width modulation) signal and the resulting output current is determined by the width of the pulse. The pulse width can be changed in order to adjust the output current and this allows for precise control over the current flowing through the circuit.The STD70N02L-1 is a popular choice for high-side switching applications because of its high-drain current and low ON-resistance. It is also small in size and requires minimal board space, making it ideal for low-power applications. Additionally, it has a low gate drive voltage and is extremely efficient in its operation.In summary, the STD70N02L-1 is an MOSFET transistor designed for high-side switching applications, featuring high-drain current, low ON-resistance and low gate drive voltage. It is also compact in size, efficient in operation, and can be used for a variety of control applications. This makes it a useful device for many power electronics applications.

The specific data is subject to PDF, and the above content is for reference

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