Allicdata Part #: | SI5475DC-T1-E3-ND |
Manufacturer Part#: |
SI5475DC-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 12V 5.5A 1206-8 |
More Detail: | P-Channel 12V 5.5A (Ta) 1.3W (Ta) Surface Mount 12... |
DataSheet: | SI5475DC-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 450mV @ 1mA (Min) |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | 1206-8 ChipFET™ |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.3W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 31 mOhm @ 5.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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Introduction
The SI5475DC-T1-E3, sometimes referred to as the “DC MOSFET,” is a silicon-based, N-channel depletion-mode, metal-oxide semiconductor field-effect transistor (MOSFET). It is part of a family of discrete MOSFETs that are used in power electronics applications such as switching, sequencing, and protection. This specific device offers a breakdown voltage of 125V and a drain-source on-resistance of 0.5 ohm.
Applications
The SI5475DC-T1-E3 can be used in applications where a low-voltage MOSFET is required, such as motor control, lighting switches, and power converters. It provides a low on-resistance of 0.5 ohm, so it is able to switch high currents up to 40A with a low voltage drop. This makes it an ideal choice for power electronics applications, as a single device will be able to control large currents with low losses. In addition, it has a low output capacitance, making it suitable for high-frequency switching.
Working Principle
The SI5475DC-T1-E3 operates on a simple working principle: In the OFF state, the gate voltage is greater than the source voltage, creating a depletion region that blocks current flow through the channel. When the gate voltage is reduced, the depletion region becomes narrower, allowing current to flow through the channel. The gate voltage is controlled by a voltage source, which can be a microcontroller or another type of logic device.
In the ON state, the gate voltage is less than the source voltage, creating a channel that allows current to flow. This voltage is typically supplied by the same voltage source as in the OFF state, and the current flow is regulated by a current source. This current source provides a constant current to the channel, allowing the device to handle high currents with low voltage drop.
Conclusion
The SI5475DC-T1-E3 is a silicon-based, N-channel depletion-mode, metal-oxide semiconductor field-effect transistor (MOSFET). It offers a breakdown voltage of 125V and an on-resistance of 0.5 ohms, and can be used in applications that require switching high currents with low voltage drop, such as motor control and lighting switches. The working principle of the device is simple: In the OFF state, the gate voltage is greater than the source voltage, and in the ON state, the gate voltage is less than the source voltage, allowing current to flow through the channel.
The specific data is subject to PDF, and the above content is for reference
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