Allicdata Part #: | SIA439EDJ-T1-GE3TR-ND |
Manufacturer Part#: |
SIA439EDJ-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 28A SC-70-6L |
More Detail: | P-Channel 20V 28A (Tc) 3.5W (Ta), 19W (Tc) Surface... |
DataSheet: | SIA439EDJ-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | PowerPAK® SC-70-6 |
Supplier Device Package: | PowerPAK® SC-70-6 Single |
Mounting Type: | Surface Mount |
Operating Temperature: | -50°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.5W (Ta), 19W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2410pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 69nC @ 8V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 16.5 mOhm @ 5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIA439EDJ-T1-GE3 is a single DMOS Enhancement-Mode Field Effect Transistor (FET) that is designed for switching applications. It is an easy-to-use device, which makes it ideal for a wide range of applications. This FET has a variety of features that make it suitable for many different applications. It has a high-speed channel, low drain-source capacitance, low on-resistance, and a low input capacitance. Additionally, it has a low gate-source leakage current, making it suitable for use in low-noise designs.
The SIA439EDJ-T1-GE3 can be used in a variety of applications, such as power MOSFETs for DC/DC converting, switching regulators, and motor control applications. It is also suitable for use in applications such as power supplies, lighting controls, HVAC systems, and power amplifiers.In order to understand how the SIA439EDJ-T1-GE3 works, it is important to understand the basics of FETs. FETs are conducting devices that use an electric field to control the flow of electrons through the device. They are composed of billions of individual transistors, which are arranged in an array. Each transistor has a completely independent electrical field.In the case of the SIA439EDJ-T1-GE3, electrons will flow through the device when the drain-source voltage (Vds) is greater than the threshold voltage Vth. This voltage is created by applying a positive gate-source voltage Vgs. When Vgs is applied, a depletion layer is created at the gate-channel interface, which inhibits the flow of electrons through the channel. This creates the effect of the FET being “on” or “off”.The SIA439EDJ-T1-GE3 also has a low input capacitance, which helps reduce power consumption in applications such as switching regulators. Additionally, the device has a high-speed channel and low drain-source capacitance, which allow for faster switching times and more efficient operation.The SIA439EDJ-T1-GE3 is a versatile and easy-to-use device, which makes it ideal for use in a variety of applications, such as power MOSFETs for DC/DC converting, switching regulators, and motor control applications. It is also suitable for use in applications such as power supplies, lighting controls, HVAC systems, and power amplifiers. Additionally, the device has a high-speed channel, low drain-source capacitance, and low input capacitance, which make it suitable for use in low-noise designs.
The specific data is subject to PDF, and the above content is for reference
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